Method of manufacturing ferroelectric thin film for data storage and method of manufacturing ferroelectric recording medium using the same method

1. A method of manufacturing a ferroelectric thin film, the method comprising:

forming on a substrate a metal nitride-based precursor layer containing one selected from the group consisting of TiN, Zr x Ti (1-x) N (0<x<1), FeN, and NbN;

forming on the metal nitride-based precursor layer a mixed gas atmosphere containing oxygen (O 2 ) and one reactive gas selected from the group consisting of PbO(g), Bi 2 O 3 (g), and K 2 O(g); and

annealing the metal nitride-based precursor layer in the mixed gas atmosphere and forming a ferroelectric thin film containing one selected from the group consisting of PbTiO 3 , PbZr 2 Ti (1-x) O 3 (0<x<1), Bi 2 Ti 2 O 7 , Bi 4 Ti 3 O 12 , BiFeO 3 , and KNbO 3 .

2. The method of claim 1 , wherein the forming of the metal nitride-based precursor layer comprises doping the metal nitride-based precursor layer with at least one element selected from the group consisting of Zr, Nb, and V.

3. The method of claim 1 , wherein the metal nitride-based precursor layer is formed to a thickness of 2 μm or less.

4. The method of claim 1 , wherein the metal nitride-based precursor layer is annealed at a temperature of 400 to 800° C.

5. The method of claim 4 , wherein the metal nitride-based precursor layer is annealed at a temperature of 400 to 650° C.

6. The method of claim 1 , wherein the mixed gas atmosphere is formed by thermal evaporation or sputtering.

7. The method of claim 1 , wherein the forming of the ferroelectric tin film satisfies:

2TiN(s)+2O 2 (g)+2PbO(g)→2PbTiO 3 (s)+N 2 (g).

8. The method of claim 1 , wherein the forming of the ferroelectric thin film satisfies:

2TiN(s)+2O 2 (g)→2TiO 2 (s)+N 2 (g)

TiO 2 (s)+PbO(g)→PbTiO 3 (s).

9. The method of claim 1 , wherein the forming of the ferroelectric thin film satisfies:

2Zr x Ti (1-x) N(s)+2O 2 (g)+2PbO(g)→2PbZr x Ti (1-x) O 3 +N 2 (g).

10. The method of claim 1 , wherein the forming of the ferroelectric thin film satisfies:

2Zr x Ti (1-x) N(s)+2O 2 (g)→2Zr x Ti (1-x) O 2 (s)+N 2 (g)

Zr x Ti (1-x) O 2 (s)+PbO(g)→PbZr x Ti (1-x) O 3 (s).

11. The method of claim 1 , wherein the forming of the ferroelectric thin film satisfies:

2TiN(s)+Bi 2 O 3 (g)+20 2 (g)→Bi 2 Ti 2 O 7 (s)+N 2 (g).

12. The method of claim 1 , wherein the forming of the ferroelectric thin film satisfies:

6TiN(s)+4Bi 2 O 3 (g)+6O 2 (g)→2Bi 4 Ti 3 O 12 (s)+3N 2 (g).

13. The method of claim 1 , wherein the forming of the ferroelectric thin film satisfies:

4FeN(s)+2Bi 2 O 3 (g)+3O 2 (g)→4BiFeO 3 (s)+2N 2 (g).

14. The method of claim 1 , wherein the forming of the ferroelectric thin film satisfies:

4NbN(s)+2K 2 O(g)+5O 2 (g)→4KNbO 3 (s)+2N 2 (g).

15. The method of claim 1 , wherein the forming of the ferroelectric thin film satisfies:

2K 2 O(g)+O 2 (g)→2K 2 O 2 (g)

4NbN(s)+2K 2 O 2 (g)+4O 2 (g)→4KNbO 3 (s)+2N 2 (g).

16. A ferroelectric thin film manufactured by the method of claim 1 .

17. A method of manufacturing a ferroelectric recording medium, the method comprising:

forming a conductive electrode layer on a substrate;

forming on the electrode layer a metal nitride-based precursor layer containing one selected from the group consisting of TiN, Zr x Ti (1-x) N (0<x<1), FeN, and NbN;

forming on the metal nitride-based precursor layer a mixed gas atmosphere containing oxygen (O 2 ) and one reactive gas selected from the group consisting of PbO(g), Bi 2 O 3 (g), and K 2 O(g); and

annealing the metal nitride-based precursor layer in the mixed gas atmosphere and forming a ferroelectric thin film containing one selected from the group consisting of PbTiO 3 , PbZr z Ti (1-x) O 3 (0<x<1), Bi 2 Ti 2 O 7 , Bi 4 Ti 3 O 12 , BiFeO 3 , and KNbO 3 .

18. A ferroelectric recording medium manufactured by the method of claim 17 .

19. A method of manufacturing a ferroelectric recording medium, the method comprising:

forming on a substrate a metal nitride-based precursor layer containing one selected from the group consisting of TiN, Zr x Ti (1-x) N (0<x<1), FeN, and NbN;

forming on the metal nitride-based precursor layer a mixed gas atmosphere containing oxygen (O 2 ) and one reactive gas selected from the group consisting of PbO(g), Bi 2 O 3 (g), and K 2 O(g); and

annealing the metal nitride-based precursor layer in the mixed gas atmosphere and forming on a surface layer of the annealed metal nitride-based precursor layer a ferroelectric thin film containing one selected from the group consisting of PbTiO 3 , PbZr x Ti (1-x) O 3 (0<x<1), Bi 2 Ti 2 O 7 , Bi 4 Ti 3 O 12 , BiFeO 3 , and KNbO 3 .

20. A ferroelectric recording medium manufactured by the method of claim 19 .

21. A method of manufacturing a ferroelectric thin film, the method comprising:

forming a precursor layer on a substrate;

forming on the precursor layer a mixed gas atmosphere and one reactive gas; and

annealing the precursor layer in the mixed gas atmosphere to form a ferroelectric thin film,

wherein a metal nitride-based precursor layer containing a metal nitride selected from the group consisting of TiN, Zr x Ti (1-x) N (0<x<1), FeN, and NbN is formed on the substrate.

22. The method of claim 21 , wherein a mixed gas atmosphere containing oxygen (O 2 ) and one reactive gas selected from the group consisting of PbO(g), Bi 2 O 3 (g), and K 2 O(g) is formed on the precursor layer.

23. The method of claim 22 , wherein the metal nitride-based precursor layer is annealed in the mixed gas atmosphere and a ferroelectric thin film containing one selected from the group consisting of PbTiO 3 , PbZr x Ti (1-x) O 3 (0<x<1), Bi 2 Ti 2 O 7 , Bi 4 Ti 3 O 12 , BiFeO 3 , and KNbO 3 is formed.