Non-volatile semiconductor memory device, erase method for same, and test method for same

1. A non-volatile semiconductor memory device comprising:

a memory cell array having a plurality of non-volatile memory cells that are electrically rewritable; and

an operation control circuit controlling an operation of said memory cell array in accordance with an external instruction, wherein said operation control circuit comprises:

a flag circuit that is set when erase incompletion is detected from any of said memory cells by an erase verify operation of said memory cell array; and

an erase prohibition circuit that prohibits an erase operation to said memory cell array irrespective of said external instruction when said flag circuit is in a reset state.

2. The non-volatile semiconductor memory device according to claim 1 , wherein

said operation control circuit further comprises a command output circuit functioning as said erase prohibition circuit and outputting an erase command only when said flag circuit is in a set state, the erase command being to instruct the erase operation to said memory cell array.

3. The non-volatile semiconductor memory device according to claim 1 , wherein

said operation control circuit further comprises a voltage generating circuit functioning as said erase prohibition circuit and generating an erase voltage only when said flag circuit is in a set state, the erase voltage being to be used in the erase operation of said memory cell array.

4. The non-volatile semiconductor memory device according to claim 1 , wherein

said operation control circuit further comprises a voltage applying circuit functioning as said erase prohibition circuit and applying an erase voltage to control gates of said memory cells only when said flag circuit is in a set state.

5. The non-volatile semiconductor memory device according to claim 1 , wherein

said flag circuit is reset before the erase verify operation of said memory cell array is started.

6. An erase method for a non-volatile semiconductor memory device including a memory cell array having a plurality of non-volatile memory cells that are electrically rewritable, the method comprising the steps of

prohibiting an erase operation to said memory cell array irrespective of an external instruction after erase completion is detected from all of said memory cells by an erase verify operation of said memory cell array.

7. The erase method for the non-volatile semiconductor memory device according to claim 6 , wherein

an erase command to instruct the erase operation to said memory cell array is outputted only when erase incompletion is detected from any of said memory cells by the erase verify operation of said memory cell array.

8. The erase method for the non-volatile semiconductor memory device according to claim 6 , wherein

an erase voltage to be used in the erase operation of said memory cell array is generated only when erase incompletion is detected from any of said memory cells by the erase verify operation of said memory cell array.

9. The erase method for the non-volatile semiconductor memory device according to claim 6 , wherein

an erase voltage is applied to control gates of said memory cells only when erase incompletion is detected from any of said memory cells by the erase verify operation of said memory cell array.

10. A test method for erasing a plurality of non-volatile semiconductor memory devices simultaneously, the non-volatile semiconductor memory devices each including a memory cell array having a plurality of non-volatile memory cells that are electrically rewritable, the method comprising the step of

in each of said non-volatile semiconductor memory devices, prohibiting an erase operation to said memory cell array irrespective of an external instruction after erase completion is detected from all of said memory cells by an erase verify operation of said memory cell array.