Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device
View Patent ↗A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.
1. A semiconductor chip, comprising:
a semiconductor substrate having a front surface and a rear surface;
a functional device provided in the front surface of the semiconductor substrate; and
a through-electrode electrically connected to the functional device and provided in a through-hole disposed on a lateral side of the functional device as extending thicknesswise through the semiconductor substrate, the through-electrode electrically connecting a front side and a rear side of the semiconductor substrate,
wherein the through-electrode includes:
a seed layer having a portion disposed in a depthwise middle portion of the through-hole as closing the through-hole;
a front side electrode disposed on a side of the through-hole closing portion of the seed layer closer to the front surface in the through-hole; and
a rear side electrode disposed on a side of the through-hole closing portion of the seed layer closer to the rear surface in the through-hole.
2. A semiconductor chip, comprising:
a semiconductor substrate having a front surface and a rear surface;
a functional device provided in the front surface of the semiconductor substrate; and
a through-electrode electrically connected to the functional device and provided in a through-hole disposed on a lateral side of the functional device as extending thicknesswise through the semiconductor substrate, the through-electrode electrically connecting a front side and a rear side of the semiconductor substrate,
wherein the through-electrode includes:
a front side electrode disposed in a front side recess which is provided in the front surface of the semiconductor substrate and partly constitutes the through-hole; and
a rear side electrode disposed in a rear side recess which is provided in the rear surface of the semiconductor substrate in communication with the front side recess and partly constitutes the through-hole,
wherein the rear side recess occupies a major area of the rear surface including an area associated with a front side portion provided with the front side electrode.
3. A semiconductor chip as set forth in claim 1 ,
wherein the rear side electrode includes a ground interconnection provided in the rear surface of the semiconductor substrate.
4. A semiconductor chip as set forth in claim 1 ,
wherein the rear side electrode includes a power supply interconnection provided in the rear surface of the semiconductor substrate.
5. A semiconductor device, comprising plural semiconductor chips stacked thicknesswise,
wherein the semiconductor chips each include:
a semiconductor substrate having a front surface and a rear surface;
a functional device provided in the front surface of the semiconductor substrate; and
a through-electrode electrically connected to the functional device and provided in a through-hole disposed on a lateral side of the functional device as extending thicknesswise through the semiconductor substrate, the through-electrode electrically connecting a front side and a rear side of the semiconductor substrate,
wherein the through-electrode includes:
a seed layer having a portion disposed in a depthwise middle portion of the through-hole as closing the through-hole;
a front side electrode disposed on a side of the through-hole closing portion of the seed layer closer to the front surface in the through-hole; and
a rear side electrode disposed on a side of the through-hole closing portion of the seed layer closer to the rear surface in the through-hole.
6. A semiconductor device, comprising plural semiconductor chips stacked thicknesswise,
wherein the semiconductor chips each includes:
a semiconductor substrate having a front surface and a rear surface;
a functional device provided in the front surface of the semiconductor substrate; and
a through-electrode electrically connected to the functional device and provided in a through-hole disposed on a lateral side of the functional device as extending thicknesswise through the semiconductor substrate, the through-electrode electrically connecting a front side and a rear side of the semiconductor substrate,
wherein the through-electrode includes:
a front side electrode disposed in a front side recess which is provided in the front surface of the semiconductor substrate and partly constitutes the through-hole; and
a rear side electrode disposed in a rear side recess which is provided in the rear surface of the semiconductor substrate in communication with the front side recess and partly constitutes the through-hole,
wherein the rear side recess occupies a major area of the rear surface including an area associated with the front side portion provided with the front side electrode.
7. A semiconductor device as set forth in claim 1 ,
wherein the semiconductor chips each include a bump provided on at least one of the front and rear surfaces and electrically connected to the through-electrode,
wherein the bump provided on one of each adjacent pair of the semiconductor chips is connected to the bump provided on the other semiconductor chip.