Method for Raman imaging of semiconductor materials

1 . A method of inspection of an ion implanted semiconductor wafer, comprising:

(a) illuminating an implanted surface of the ion implanted semiconductor wafer with a flood illumination of monochromatic light of wavelength λ 1 , the flood illumination illuminating at least an area A of the wafer, the implanted surface having Raman active features induced by the ion implantation; then

(b) imaging the implanted surface of the wafer using light scattered from the wafer of a wavelength which is Raman shifted in frequency from the light of wavelength λ 1 .

2 . The method of claim 1 , where the imaging forms an image in two spatial directions using a single Raman shifted wavelength 2 .

3 . The method of claim 2 , further comprising imaging at least one further image, wherein each further image is imaged using light of a Raman shifted wavelength λ n having a different Raman shift from the light of a wavelength λ 2 .

4 . The method of claim 1 , where the imaging is in a first spatial dimension and one Raman shifted wavelength dimension, wherein a second spatial dimension is kept constant.

5 . The method of claim 1 , where the ion implanted semiconductor wafer is a silicon wafer, and the frequency of the light of wavelength λ 2 is Raman shifted from frequency of the light of wavelength λ 1 by the Raman shift of single crystal silicon of approximately 520 cm −1 .

6 . The method of claim 1 , where the semiconductor wafer is a silicon wafer, and the frequency of the light of a wavelength λ 2 is Raman shifted from frequency of the light of wavelength λ1 by the Raman shift of fully amorphous silicon of approximately 480 cm −1 .

7 . The method of claim 1 , where the wavelength λ 2 is short enough that the penetration depth of the light of wavelength λ 1 is less than 100 run.