Electroluminescent element and manufacturing method thereof
View Patent ↗The present invention improves luminance and light emitting efficiency of electroluminescent elements. A manufacturing method of electroluminescent elements includes forming a positive electrode on a substrate, forming an organic compound layer on the positive electrode, forming an electron injecting layer on the organic compound layer, and forming a transparent conductive film on the electron injecting layer, thus forming electroluminescent element. After forming the transparent conductive film on the electron injecting layer, by applying a voltage between the positive electrode and the transparent conductive film while heating the electroluminescent element, light emission of the electroluminescent element such as luminance and light emitting efficiency is improved.
1. A manufacturing method of an electroluminescent element which comprises an electrode, a counter electrode, and at least one layer of an organic compound layer between the electrode and the counter electrode, the manufacturing method comprising:
applying an electric field annealing processing that applies current having a current density of 50 to 375 A/m 2 between the electrode and counter electrode of the electroluminescent element while heating the electroluminescent element with an additional heat source,
wherein the counter electrode includes an electron injecting layer and a transparent conducting layer which contacts the electron injecting layer,
wherein the electron injecting layer comprises at least one of indium, magnesium, calcium, lithium, barium, and rare earth metals,
wherein the transparent conducting layer comprises a metal oxide, and
wherein the transparent conducting layer is formed on the electron injecting layer by a vapor growth method.
2. The manufacturing method of the electroluminescent element as claimed in claim 1 , wherein a heating temperature during the electric field annealing processing is lower than a glass transition temperature of the organic compound layer.
3. The manufacturing method of the electroluminescent element as claimed in claim 1 , wherein a time duration of the heating during the electric field annealing processing is 1 to 2 minutes.
4. The manufacturing method of the electroluminescent element as claimed in claim 1 , wherein a time duration of current application during the electric field annealing processing is 1 to 2 minutes.
5. The manufacturing method of the electroluminescent element as claimed in claim 1 , wherein the electric field annealing processing applies constant current.
6. The manufacturing method of the electroluminescent element as claimed in claim 1 , wherein the electric field annealing processing applies constant voltage.
7. The manufacturing method of the electroluminescent element as claimed in claim 1 , wherein the electroluminescent element is a top emission type.
8. The manufacturing method of the electroluminescent element as claimed in claim 1 , wherein the electron injecting layer contacts the organic compound layer.
9. The manufacturing method of the electroluminescent element as claimed in claim 1 , wherein the metal oxide includes one of tin-doped indium oxide and zinc-doped indium oxide.
10. A manufacturing method of an electroluminescent element which comprises an electrode, a counter electrode, and at least one layer of an organic compound layer between the electrode and the counter electrode, the manufacturing method comprising:
applying an electric field annealing processing that applies current having a current density of 50 to 375 A/m 2 between the electrode and counter electrode of the electroluminescent element while heating the electroluminescent element with an additional heat source,
wherein the counter electrode includes an electron injecting layer which contacts the organic compound layer, and a transparent conducting layer which contacts the electron injecting layer,
wherein the electron injecting layer comprises at least one of indium, magnesium, calcium, lithium, barium, and rare earth metals,
wherein the transparent conducting layer comprises a metal oxide including one of tin-doped indium oxide and zinc-doped indium oxide, and
wherein the transparent conducting layer is formed on the electron injecting layer by a vapor growth method.
11. A manufacturing method of an electroluminescent element which comprises an electrode, a counter electrode, and at least one layer of an organic compound layer between the electrode and the counter electrode, the manufacturing method comprising:
applying an electric field annealing processing that applies current having a current density of 50 to 375 A/m 2 between the electrode and counter electrode of the electroluminescent element while heating the electroluminescent element with an additional heat source,
wherein the counter electrode includes an electron injecting layer which contacts the organic compound layer, and a transparent conducting layer which contacts the electron injecting layer,
wherein the electron injecting layer comprises at least one of indium, magnesium, calcium, lithium, barium, and rare earth metals,
wherein the transparent conducting layer comprises a metal oxide including one of tin-doped indium oxide and zinc-doped indium oxide,
wherein a time duration of the heating during the electric field annealing processing is 1 to 2 minutes, and
wherein the transparent conducting layer is formed on the electron injecting layer by a vapor growth method.