Nano tube photo detecting device

1. A photo detecting device, comprising:

i) a photo-electron generating body, which absorbs light and generates photo-electrons, and

ii) a transistor, across which an electric current flows in accordance with a quantity of the photo-electrons having been generated by the photo-electron generating body,

an electrical insulator being formed on a surface of the photo-electron generating body,

the transistor being provided with a source electrode and a drain electrode, which are formed on the electrical insulator having been formed on the surface of the photo-electron generating body,

the source electrode and the drain electrode of the transistor being connected with each other via a channel section containing a nano-tube having electrically conductive or semi-conductive characteristics.

2. A device as defined in claim 1 wherein the photo-electron generating body is constituted of a semiconductor laminate structure body having a structure selected from the group consisting of a pn junction structure, a pin junction structure, a multiple quantum well structure, and a quantum dot structure.

3. A device as defined in claim 1 wherein the nano-tube constituting the channel section contains at least one kind of substance selected from the group consisting of carbon, boron nitride, and silicon.

4. The device as defined in claim 1 , wherein the nano-tube comprises one of boron nitride and silicon.

5. The device as defined in claim 1 , wherein the photo-electron generating body comprises one of a pin junction structure, a multiple quantum well structure, and a quantum dot structure.

6. The device as defined in claim 1 , wherein the photo-electron generating body comprises a P layer to receive light and an N layer disposed proximate to the insulator to output the photo-electrons, wherein the N layer is disposed over substantially entire surface of the P layer.

7. The device as defined in claim 1 , wherein the photo-electron generating body comprises a P layer to receive light and an N layer disposed proximate to the insulator to output the photo-electrons, wherein the N layer is disposed over entire surface of the P layer.

8. A photo detecting device, comprising:

a photo-electron generating body which photo-electron generating body absorbs light and generates photo-electrons;

an insulating layer disposed proximate a first surface of the photo-electron generating body; and

a transistor disposed on the insulating layer, across which transistor an electric current flows in accordance with a quantity of the photo-electrons generated by the photo-electron generating body, the transistor comprising:

a gate disposed proximate a second surface of the photo-electron generating body, which second surface is opposing the first surface, the light impinging on the gate and being transmitted to the photo-electron generating body,

a source electrode,

a drain electrode, and

a channel section comprising a nano-tube having electrically conductive or semi-conductive characteristics, which nano-tube electrically couples the source and drain electrodes.

9. The photo detecting device according to claim 8 , wherein the photo-electron generating body comprises a P layer disposed on the gate to receive light and an N layer disposed on the P layer to output photo-electrons.

10. The photo detecting device according to claim 8 , wherein the photo-electron generating body comprises:

a multiple quantum well structure comprising alternatively overlaid barrier layers and well layers.

11. The photo detecting device according to claim 8 , wherein the photo-electron generating body is directly disposed on the gate.

12. The photo detecting device according to claim 8 , wherein the channel section is disposed as a conductive material between the source and drain electrodes, the channel section having a smaller physical height than the source and drain electrodes.