Direct FET device for high frequency application
View Patent ↗A source mounted semiconductor device package is described which includes a semiconductor die having first and second opposing major surfaces, first and second major electrodes disposed on respective major surfaces and a control electrode disposed on the second major surface, and a thin metal clip electrically connected to the first major electrode of the die. The thin metal clip has a relatively large surface area, and package resistance which is caused by skin effect phenomenon is reduced thereby in high frequency applications.
1. A semiconductor device package, comprising:
a semiconductor die having first and second major surfaces;
first and second major electrodes on said respective major surfaces; and
a cup-shaped clip having a conductive layer electrically and mechanically connected to said first major surface and a cup-shaped insulating layer laminated to said conductive layer.
2. The package of claim 1 , wherein said clip includes two rows of projections placed at opposing edges thereof.
3. The package of claim 1 , wherein the dimensions of said clip depend on at least one of the height and length of said semiconductor die.
4. The package of claim 1 , wherein said clip includes alternating conductive and insulating layers.
5. The package of claim 1 , wherein said conductive layer is comprised of copper.
6. The package of claim 1 , wherein said clip includes alternating layers of copper layers and insulation layers.
7. The package of claim 1 , wherein said semiconductor die includes a control electrode disposed on said second major surface.