Metal polishing liquid and polishing method using it
View Patent ↗A metal polishing liquid which contains a compound represented by the following formula (1), an aromatic heterocyclic ring compound, and an oxidizing agent, and a chemical mechanical polishing method using the metal polishing liquid. In the formula (1), R 1 denotes an alkylene group, and R 2 and R 3 each separately denote a hydrogen atom, a halogen atom, an acyl group, an alkyl group, an alkenyl group, an alkynyl group, or an aryl group.
1. A metal polishing liquid comprising:
a compound represented by the following formula (1), an aromatic heterocyclic ring compound, and an oxidizing agent:
wherein R 1 denotes an alkylene group having 1 to 8 carbon atoms, R 2 and R 3 each separately denote a hydrogen atom, a halogen atom, an acyl group, an alkyl group, an alkenyl group, an alkynyl group, or an aryl group.
2. The metal polishing liquid of claim 1 , wherein the aromatic heterocyclic ring compound is at least one selected from 1,2,3,4-tetrazole, 5-amino-1,2,3,4-tetrazole, 5-methyl-1,2,3,4-tetrazole, 1,2,3-triazole, 4-amino-1,2,3-triazole, 4,5-diamino-1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, and benzotriazole.
3. The metal polishing liquid of claim 1 , further comprising abrasive grains.
4. The metal polishing liquid of claim 3 , wherein the abrasive grains are made of colloidal silica.
5. The metal polishing liquid of claim 1 , the liquid is used for polishing a semiconductor integrated circuit.
6. A chemical mechanical polishing method comprising:
contacting a metal polishing liquid that comprises a compound represented by the following formula (1), an aromatic heterocyclic ring compound, and an oxidizing agent with a surface to be polished, and polishing by relatively moving the surface to be polished and a polishing surface:
wherein R 1 denotes an alkylene group having 1 to 8 carbon atoms, R 2 and R 3 each separately denote a hydrogen atom, a halogen atom, an acyl group, an alkyl group, an alkenyl group, an alkynyl group, or an aryl group.
7. The chemical mechanical polishing method of claim 6 , wherein the aromatic heterocyclic ring compound is at least one selected from 1,2,3,4-tetrazole, 5-amino-1,2,3,4-tetrazole, 5-methyl-1,2,3,4-tetrazole, 1,2,3 -triazole, 4-amino-1,2,3-triazole, 4,5-diamino-1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, and benzotriazole.
8. The chemical mechanical polishing method of claim 6 , further comprising abrasive grains.
9. The chemical mechanical polishing method of claim 8 , wherein the abrasive grains are made of colloidal silica.