Nanowire capacitor and methods of making same
View Patent ↗A nanowire capacitor and methods of making the same are disclosed. The nanowire capacitor includes a subrate and a semiconductor nanowire that is supported by the substrate. An insulator is formed on a portion of the surface of the nanowire. Additionally, an outer coaxial conductor is formed on a portion insulator and a contact coupled to the nanowire.
1. A capacitor device, comprising:
a substrate;
a semiconductor nanowire, supported by the substrate, wherein the nanowire has a length and a diameter thereby defining a surface;
an insulator formed on at least a portion of the surface;
an outer coaxial conductor formed on a least a portion of the insulator and configured to be in physical contact with a region of the nanowire; and
an electrical contact coupled to the nanowire.
2. The device of the claim 1 , wherein the substrate is an insulating material, a semiconductor, a plastic or a ceramic.
3. The device of claim 1 , wherein the region of the nanowire is doped P+type.
4. The device of claim 3 , wherein the region comprises a central region of the nanowire.
5. The device of claim 1 , wherein the electrical contact is coupled to a supply voltage.
6. The device of claim 5 , wherein the outer coaxial conductor is coupled to the supply volatage.
7. The device of claim 1 , wherein the electrical contact is coupled to an end region of the nanowire.
8. A circuit comprising a plurality of components, wherein at least one of the plurality of components is electrically coupled to the capacitor device of claim 1 .
9. The curcuit of claim 8 , wherein the plurality of components and the capacitor device form a phase-shifter.
10. A circuit comprising a pluarlity of nanowires configured as the capacitor device of claim 1 .
11. The device of claim 1 , wherein the electrical contact is coupled to both ends of the nanowire.