IP Library Granted Patent US 7,407,841
Granted Patent B2
US 7,407,841 · App. 11/527,549 · Granted Aug 5, 2008

Liquid crystal display panel and method of fabricating thereof

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Quick Facts
Patent No.
US 7,407,841
App. No.
11/527,549
Granted
Aug 5, 2008
Kind
B2
Abstract

The present invention relates to a liquid crystal display panel and a fabricating method thereof that is capable of enhancing crystallization efficiency of an active layer and simplifying the fabricating process. A fabricating method of a liquid crystal display panel includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode formed thereon; forming an amorphous silicon film on the gate insulating film; forming an insulating pattern on the amorphous silicon film; crystallizing the amorphous silicon film into a polycrystalline silicon film using a derivative metal, the polycrystalline silicon film having source, drain and channel areas, wherein the insulating pattern overlaps the channel area of the polycrystalline silicon film; and forming source and drain electrodes on the polycrystalline silicon film, wherein the source and the drain electrodes contacting the source and drain areas of the polycrystalline silicon film, respectively.

Claims (45)

1. A method of fabricating a liquid crystal display panel, comprising:

forming a gate electrode on a substrate;

forming a gate insulating film on the gate electrode formed thereon;

forming an amorphous silicon film on the gate insulating film;

forming an insulating pattern on the amorphous silicon film;

crystallizing the amorphous silicon film into a polycrystalline silicon film using a derivative metal, the polycrystalline silicon film having source, drain and channel areas, wherein the insulating pattern overlaps the channel area of the polycrystalline silicon film; and

forming source and drain electrodes on the polycrystalline silicon film, wherein the source and the drain electrodes contacting the source and drain areas of the polycrystalline silicon film, respectively;

wherein crystallizing the amorphous silicon film into a polycrystalline silicon film using a derivative metal further includes:

forming the derivative metal on the insulating pattern and the amorphous silicon film;

injecting an impurity ion into the amorphous silicon film having the derivative metal formed thereon; and

applying a heat and an electric field to the amorphous silicon film, wherein the impurity ion injected into the amorphous silicon film is activated during the application of the heat; and

wherein forming source and drain electrodes on the polycrystalline silicon film further includes:

forming sequentially a data metal layer and the photo-resist on the polycrystalline film;

forming a stepped photo-resist pattern with a mask having a partially exposing part:

etching the data metal layer and the polycrystalline silicon film using the stepped photo-resist pattern;

ashing the stepped photo-resist pattern; and

etching the data metal layer using the ashed photo-resist pattern, thereby exposing the insulating pattern overlapping the channel area of the polycrystalline silicon film.

2. The fabricating method of the liquid crystal display panel according to claim 1 , wherein the derivative metal includes nickel (Ni).

3. The fabricating method of the liquid crystal display panel according to claim 1 , wherein forming an insulating pattern on the amorphous silicon film further includes:

forming sequentially an insulating material and an photo-resist on the amorphous silicon film;

irradiating light from the backside of the substrate toward the photo-resist;

developing the photo-resist to form a photo-resist pattern; and etching the insulating material using the photo-resist pattern as a mask.

4. A method of fabricating a liquid crystal display panel, comprising:

forming a gate electrode on a substrate;

forming a gate insulating layer on the gate electrode;

depositing an amorphous silicon film on the gate insulating layer;

forming an insulating pattern on the amorphous silicon film;

forming a derivative metal on the insulating pattern and the amorphous silicon film;

crystallizing the amorphous silicon film into a polycrystalline silicon film, the polycrystalline silicon film having source, drain and channel areas; and

forming source and drain electrodes on the polycrystalline silicon film;

wherein crystallizing the amorphous silicon film into a polycrystalline silicon film using a derivative metal further includes:

forming the derivative metal on the insulating pattern and the amorphous silicon film;

injecting an impurity ion into the amorphous silicon film having the derivative metal formed thereon; and

applying a heat and an electric field to the amorphous silicon film, wherein the impurity ion injected into the amorphous silicon film is activated during the application of the heat; and

wherein forming source and drain electrodes on the polycrystalline silicon film further includes:

forming sequentially a data metal layer and the photo-resist on the polycrystalline film;

forming a stepped photo-resist pattern with a mask having a partially exposing part;

etching the data metal layer and the polycrystalline silicon film using the stepped photo-resist pattern;

ashing the stepped photo-resist pattern; and

etching the data metal layer using the ashed photo-resist pattern, thereby exposing the insulating pattern overlapping the channel area of the polycrystalline silicon film.

5. The fabricating method of the liquid crystal display panel according to claim 4 , wherein the insulating pattern is formed by a backside exposure using the gate electrode as a mask.

6. The fabricating method of the liquid crystal display panel according to claim 4 , wherein the insulating pattern overlaps the channel area of the polycrystalline silicon film.

7. The fabricating method of the liquid crystal display panel according to claim 4 , wherein the source and drain electrodes are formed using a mask having a diffractive exposing part.

8. The fabricating method of the liquid crystal display panel according to claim 5 , wherein the liquid crystal display panel is formed with four masks.

9. The fabricating method of the liquid crystal display panel according to claim 4 , further includes forming a passivation layer having a contact hole on the source and drain electrodes and forming a transparent electrode on the passivation layer.