Semiconductor device that suppresses variations in high frequency characteristics of circuit elements
View Patent ↗A semiconductor device includes a semiconductor substrate having a main surface, the main surface including a first and second areas formed with a high-frequency circuit element, and a third area located around the first and second areas and formed with a low-frequency circuit element. The semiconductor device also includes a sealing resin which covers the main surface; a plurality of first external terminals which are formed above the third area and which are electrically connected to the high-frequency circuit element, the first external terminals protruding from the surface of the sealing resin. The semiconductor device further includes a plurality of second external terminals which are formed above the third area and which are electrically connected to the low-frequency circuit element, the second external terminals protruding from the surface of the sealing resin.
1. A semiconductor device, comprising:
a semiconductor substrate having a main surface, the main surface includes first and a second areas each formed with a high-frequency circuit element, and includes a third area located around the first and second areas and formed with a low-frequency circuit element;
a sealing resin which covers the main surface;
a plurality of first external terminals which are formed above the third area and which are electrically connected to the high-frequency circuit element, said first external terminals protruding from the surface of the sealing resin; and
a plurality of second external terminals which are formed above the third area and which are electrically connected to the low-frequency circuit element, said second external terminals protruding from the surface of the sealing resin.
2. The semiconductor device according to claim 1 , further comprising:
first electrode pads which are formed in the first and second areas, and which are electrically connected to the high-frequency circuit element;
second electrode pads which are formed in the third area, and which are electrically connected to the low-frequency circuit element;
an insulating film which is formed on the main surface so as to expose portions of surfaces of the first electrode pads and portions of surfaces of the second electrode pads;
first wirings which are formed on the insulating film and which electrically connect the first electrode pads to the first external terminals; and
second wirings which are formed on the insulating film and which electrically connect the second electrode pads to the second external terminals.
3. The semiconductor device according to claim 2 , wherein the first electrode pads are formed in an area around the first and second areas.
4. The semiconductor device according to claim 3 , wherein the third area is located in a peripheral area of the semiconductor substrate and is located in an area between the first and second areas.
5. The semiconductor device according to claim 4 , wherein the first external terminals are disposed above the third area.
6. The semiconductor device according to claim 1 , wherein the first external terminals and the second external terminals are substantially regularly disposed at predetermined intervals.
7. The semiconductor device according to claim 1 , wherein the high-frequency circuit element includes an inductor element.
8. The semiconductor device according to claim 1 , wherein the first external terminals and the second external terminals are formed only above the third area.
9. The semiconductor device according to claims , wherein a frequency supplied to the high-frequency circuit element and a frequency processed by the high-frequency circuit element are radio frequencies.