Optically pumped surface-emitting semiconductor laser and optical projection apparatus having a semiconductor laser such as this

1. A semiconductor laser, comprising:

a mode-selective apparatus configured to suppress predeterminable, higher transversal resonator modes of the semiconductor laser;

wherein the mode-selective apparatus is firmly connected to a semiconductor body of the semiconductor laser, the mode-selective apparatus having a metal coating which is applied directly to an area of the semiconductor body;

wherein the metal coating has a maximum thickness of 15 nm, and a part of radiation generated by the semiconductor laser passes through said metal coating; and

wherein the semiconductor laser is an optically pumped, surface-emitting laser.

2. The semiconductor laser according to claim 1 , wherein the mode-selective apparatus is arranged in a beam path of a pump beam source of the surface-emitting semiconductor laser.

3. The semiconductor laser according to claim 1 , wherein the mode-selective apparatus is configured to optically influence at least a portion of pump radiation from a pump beam source of the surface-emitting semiconductor.

4. The semiconductor laser according to claim 1 , wherein the mode-selective apparatus has a suppression area which is configured to optically influence laser radiation which strikes the suppression area and circulates in a resonator in the semiconductor laser such that the laser radiation is lost to the resonator power.

5. The semiconductor laser according to claim 4 , wherein the suppression area is configured to absorb the laser radiation circulating in the resonator.

6. The semiconductor laser according to claim 4 , wherein the suppression area is configured to change a direction of the laser radiation circulating in the resonator.

7. The semiconductor laser according to claim 1 , wherein the mode-selective apparatus has an area through which laser radiation circulating in a resonator passes from a suppression area of the mode-selective apparatus without being disturbed by the mode-selective apparatus.

8. The semiconductor laser according to claim 7 , wherein a size of the area is chosen such that only a transverse fundamental mode of the resonator is excitable.

9. The semiconductor laser according to claim 1 , wherein the mode-selective apparatus is configured to suppress excitation of higher modes than a fundamental mode in a resonator of semiconductor laser.

10. The semiconductor laser according to claim 1 , wherein the mode-selective apparatus is in direct contact with an area of the semiconductor body through which radiation can pass.

11. The semiconductor laser according to claim 1 , wherein the mode-selective apparatus is formed by a zone which is structured into the semiconductor body.

12. The semiconductor laser according to claim 4 , wherein the suppression area is formed by a part of the semiconductor body.

13. The semiconductor laser according to claim 4 , wherein the suppression area is structured into the semiconductor body.

14. The semiconductor laser according to claim 1 , wherein the mode-selective apparatus comprises an element which is applied to a surface of the semiconductor body through which radiation can pass.

15. The semiconductor laser according to claim 14 , wherein the element comprises a heat sink.

16. The semiconductor laser according to claim 14 , wherein the element is configured to permit frequency selection of the laser radiation passing through the element.

17. The semiconductor laser according to claim 1 , wherein at least one optically non-linear crystal is arranged in a resonator of the semiconductor laser.

18. The semiconductor laser according to claim 1 , further comprising:

a pump beam source which comprises a diode laser.

19. An optical projection apparatus, having a semiconductor laser according to claim 1 , and having drive electronics for the semiconductor laser.