Methods and systems for trimming circuits
View Patent ↗Various embodiments of the invention include methods and systems for trimming electronic circuits using short laser pulses of near-infrared wavelength at a high repetition rate. The laser pulses ablate material from a spot on a circuit with minimal thermal and photoelectric disturbances to circuit performance. Minimal disturbance to circuit performance allows for repeated trimming and testing without pausing for circuit reinitialization. To optimize trimming, the laser pulses can also be adjusted responsive to the composition of the material ablated. In some embodiments, the system is configured to trim a plurality of circuits in parallel.
1. A method of removing material from the surface of a first circuit comprising:
generating a first laser pulse using a pulse generator;
targeting a spot on the first circuit using a focusing component;
delivering the first laser pulse to the spot on the first circuit, the first circuit including a digital component;
ablating material from the spot using the first laser pulse without changing a state of the digital component; and
testing performance of the first circuit following the step of ablating material, the testing being performed without reinitializing the circuit between the steps of ablating material and testing performance,
wherein targeting the spot on the first circuit comprises:
covering the first circuit using a thin conformal material configured to emit light when struck by a laser pulse of near-infrared wavelength;
generating and delivering a second laser pulse at a sub-ablation power through the thin conformal material, the second laser pulse being configured to cause the thin conformal material to emit light;
detecting the light emitted by the thin conformal material; and
using the light to guide the first laser pulse to the spot.
2. The method of claim 1 , further comprising sensing a composition of the material ablated from the spot.
3. The method of claim 1 , wherein the first laser pulse has a wavelength greater than 1100 nanometers and a duration of less than 10 picoseconds.
4. The method of claim 1 , wherein the first laser pulse has a wavelength greater than 1350 nanometers.
5. The method of claim 1 , wherein the first laser pulse is delivered as a member of a train of pulses having a repetition rate of at least 1 kHz.
6. The method of claim 1 , wherein an area from which the material is ablated has a diameter less than a diameter of a diffraction limited focal spot of the first laser pulse.
7. The method of claim 1 , wherein ablating the material comprises generating at least 5000 laser pulses including the first laser pulse.
8. The method of claim 1 , wherein ablating the material comprises generating at least 500 laser pulses.
9. The method of claim 1 , further comprising ablating material from another spot in parallel with the step of ablating material from the spot.
10. The method of claim 1 , further including generating a second laser pulse and using the second laser pulse to trim a second circuit in parallel with the first circuit.
11. The method of claim 1 , further including ablating material from a second circuit using a second laser pulse and testing performance of the second circuit, in parallel with the steps of ablating material from the spot using the first laser pulse and testing performance of the first circuit.
12. The method of claim 1 , wherein the step of generating a first laser pulse includes compressing the first laser pulse using an optical fiber.
13. The method of claim 1 , wherein the step of generating a first laser pulse includes amplifying the first laser pulse using an optical fiber.