Electrode pattern for resistance heating element and wafer processing apparatus
View Patent ↗There is disclosed a wafer processing apparatus having optimized electrode patterns for its resistive heating element. The optimized electrode pattern is designed to compensate for the heat loss around contact areas, electrical connections, and through-holes, etc., by generating more heat near or around those areas, providing maximum temperature uniformity. In another embodiment of the optimized design of the invention, the resistance of heating element closely matches the impedance of the power supply for higher efficiency, especially when higher operating temperature or higher electrical power is required.
1. A wafer processing apparatus comprising a disk-shaped substrate whose top surface serves as a wafer supporting surface and a conductive electrode contained within the disk- shaped substrate, wherein
the top surface contains at least a functional member having a shortest dimension X, the functional member is one of electrical contacts, tabs, inserts, and through-holes;
the conductive electrode having a configured path of a predetermined pattern, the electrode is connected to an external source of power for heating a wafer disposed on the wafer supporting surface; and
within a distance of 1 X of the functional member, at least one segment of the conductive electrode has a reduced path width of 0.2 to 0.95 of the electrode path width of a segment of the conductive electrode at a distance at least 3X from the functional member.
2. The wafer processing apparatus of claim 1 , wherein the conductive electrode defines at least two heating zones, an inner path and an outer path, and wherein the electrode in the outer path has an average width of 0.60 to 0.95 of the average width of the electrode in the inner path.
3. The wafer processing apparatus of claim 1 , wherein the top surface contains at least an electrical contact and wherein the conductive electrode within a distance of IX from the electrical contact is connected to the contact from one side of the contact and circling around the contact if there is adequate space near the contact areas.
4. The wafer processing apparatus of claim 1 , wherein the top surface contains at least an electrical contact and wherein at least one segment of the conductive electrode at a distance within IX from the electrical contact has a reduced path width of 0.45 to 0.8 the width of a segment of the electrode at a distance of at least 3X from the electrical contact.
5. The wafer processing apparatus of claim 1 , wherein the top surface contains at least a tab extending from one peripheral edge of disk-shaped substrate, and wherein at least one segment of the conductive electrode at a distance within IX from the tab has a reduced path width of 0.5 to 0.95 the width of a segment of the electrode path at a distance of at least 3 X from the tab.
6. The wafer processing apparatus of claim 1 , wherein the top surface contains at least a through-hole, and wherein at least one segment of the conductive electrode at a distance within IX from the through-hole has a reduced path width of 0.4 to 0.75 the width of a segment of the electrode path at a distance of at least 3 X from the through-hole.
7. The wafer processing apparatus of claim 1 , wherein the top surface contains at least a through-hole and wherein the conductive electrode defines at least two paths which meet and turn back in opposite directions at the through-hole and wherein at least one segment of the conductive electrode at a distance within IX from the through-hole has a reduced path width of 0.3 to 0.7 the width of a segment of the electrode path at a distance of at least 3 X from the through-hole.
8. The wafer processing apparatus of claim 1 , wherein the difference between a maximum temperature point and a minimum temperature point on the wafer surface area is less than 5° C. for a heater having an operating temperature of at least 600° C.
9. The wafer processing apparatus of claim 8 , wherein the difference between a maximum temperature point and a minimum temperature point on the wafer surface area is less than 2° C. for a heater having an operating temperature of 600° C.
10. The wafer processing apparatus of claim 1 , wherein the disk-shaped substrate is a multiple-layered substrate comprising: a) a base substrate comprising at least one of graphite, refractory metals, transition metals, rare earth metals and alloys thereof; b) an electrically insulating layer deposited upon the base substrate, the layer comprises at least one of an oxide, nitride, oxynitride of elements selected from a group consisting of Al, B, Si, Ga, refractory hard metals, transition metals, and combinations thereof; and c) at least an overcoating layer comprising at least one of a nitride, carbide, carbonitride, oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof;
wherein the conductive electrode is disposed on the electrically insulating layer, and wherein the conductive electrode has a coefficient of thermal expansion (CTE) in a range of 0.75 to 1.25 times that of the electrically insulating layer and the overcoating layer respectively.
11. The wafer processing apparatus of claim 10 , wherein the multiple-layered substrate further comprises a tie-layer comprising at least one of a nitride, carbide, oxide, oxynitride of elements selected from Al, Si, refractory metals, transition metals, and combinations thereof; wherein the tie-layer is deposited upon the base substrate and disposed between the base substrate and the electrically insulating layer.
12. The wafer processing apparatus of claim 1 , wherein the disk-shaped substrate comprises a high temperature material and where the conductive electrode is embedded within a metal substrate.
13. The wafer processing apparatus of claim 1 , wherein the disk-shaped substrate is a multiple-layered substrate comprising: a) a base substrate comprising at least one of an oxide, nitride, oxynitride of elements selected from a group consisting of Al, B, Si, Ga, refractory hard metals, transition metals, and combinations thereof; b) an electrically insulating layer deposited upon the base substrate, the layer comprises at least one of an oxide, nitride, oxynitride of elements selected from a group consisting of Al, B, Si, Ga, refractory hard metals, transition metals, and combinations thereof; and c) at least an overcoating layer comprising at least one of a nitride, carbide, carbonitride, oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof;
wherein the conductive electrode is disposed on the electrically insulating layer, and wherein the conductive electrode has a coefficient of thermal expansion (CTE) in a range of 0.75 to 1.25 times that of the electrically insulating layer and the overcoating layer respectively.
14. The wafer processing apparatus of claim 1 , wherein the conductive electrode comprises one of graphite, a high melting point metal alloy, a noble metal, and a noble metal alloys.
15. The wafer processing apparatus of claim 14 , wherein a coating layer comprises aluminum nitride, and wherein the coating layer is deposited on the conductive electrode by at least one of ETP, CVD and ion plating.
16. The wafer processing apparatus of claim 1 , wherein the disk-shaped substrate comprises aluminum nitride.
17. The wafer processing apparatus of claim 1 , wherein the disk-shaped substrate comprises a sintered ceramic material containing 45 to 5% by weight of AIN to 55 to 95% by weight of BN.
18. The wafer processing apparatus of claim 8 , wherein the difference in the resistance of the paths is maintained at less than 1% by adjusting at least one location where two paths meet from opposite directions.