Film transistor and method for fabricating the same

1. A method for fabricating a thin film transistor, the method comprising:

forming an amorphous silicon layer on a substrate;

forming an organic layer on the amorphous silicon layer;

forming a polycrystalline silicon layer by irradiating the amorphous silicon layer with a laser beam through the organic layer; and

removing the organic layer,

wherein the organic layer consists of a material represented by the formula X—Y—Z, and wherein X is H or CH3, Y is C4 to C50 of a linear or a branched chain, and Z is a silane group.

2. The method of claim 1 ,

wherein the silane group comprises a SiI 3 group.

3. The method of claim 1 , wherein the thickness of the organic layer is within a range of 1 nm to 10 nm.

4. The method of claim 1 , wherein the removing the organic layer comprises:

irradiating the organic layer with UV light to break a bonding between a surface of the polycrystalline silicon layer and the organic layer; and

removing the organic layer by washing with alcohol.

5. The method of claim 1 , further comprising forming a gate electrode and a gate insulating layer, wherein the gate electrode and the gate insulating layer are formed before forming the amorphous silicon layer on the substrate or after removing the organic layer.

6. The method of claim 5 further comprising:

forming a semiconductor layer by patterning the polycrystalline silicon layer;

defining a source region, a drain region and a channel region in the semiconductor layer by doping impurities into portions of the semiconductor layer; and

forming a source electrode and a drain electrode electrically connected to the source region and the drain region, respectively.

7. A method for fabricating a polycrystalline silicon layer in a thin film transistor, the method comprising:

forming an amorphous silicon layer;

forming an organic layer comprising a silane group on the amorphous silicon layer;

laser irradiating the amorphous silicon layer through the organic layer; and

removing the organic layer,

wherein the organic layer consists of a material represented by the formula X—Y—Z, and wherein X is H or CH3, Y is C4 to C50 of a linear or a branched chain, and Z is the silane group.

8. The method of claim 7 , wherein the silane group comprises SiI 3 group.

9. The method of claim 8 , wherein iodine atom of the SiI 3 group bonds with silicon in the amorphous silicon layer.

10. The method of claim 7 , wherein laser irradiating the amorphous silicon layer comprises Excimer Laser Annealing (ELA).