Polishing slurries and methods for chemical mechanical polishing
View Patent ↗Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO 3 dissolved in an oxidizing agent, and particles of MoO 2 dissolved in an oxidizing agent.
1. An aqueous slurry for chemical mechanical planarization of a copper layer on a semiconductor substrate, comprising particles of a soluble salt of molybdenum visibly dissolved in a solution of deionized water and an oxidizing agent, said soluble salt of molybdenum comprising one or more selected from the group consisting of ammonium dimolybdate and ammonium octamolybdate.
2. The aqueous slurry of claim 1 , wherein said slurry comprises about 0.1% to about 10% by weight of said soluble salt of molybdenum.
3. The aqueous slurry of claim 1 , wherein said oxidizing agent comprises one or more selected from the group consisting of hydrogen peroxide, ferric nitrate, potassium iodate, nitric acid, potassium permanganate, potassium persulfate, ammonium persulfate, potassium periodate, and hydroxylamine.
4. The aqueous slurry of claim 1 , further comprising a complexing agent.
5. The aqueous slurry of claim 1 , further comprising a nonionic surfactant, an anionic surfactant or a cationic surfactant.
6. The aqueous slurry of claim 1 , further comprising a copper corrosion inhibitor.
7. The aqueous slurry of claim 1 , wherein the pH of said aqueous slurry is in the range of about 4 to about 6.
8. The aqueous slurry of claim 1 , further comprising ceramic/metal oxide particles comprising one or a mixture of silica, ceria, zirconia, titania, magnesia, iron oxide, tin oxide, and germania.
9. The aqueous slurry of claim 8 , wherein the ceramic/metal oxide particles include colloidal particles.
10. The aqueous slurry of claim 9 , wherein the colloidal particles include colloidal silicon dioxide particles.
11. The aqueous slurry of claim 10 , wherein the colloidal silicon dioxide particles have an average particle size of between about 10 nm and about 100 nm.
12. The aqueous slurry of claim 8 , wherein the ceramic/metal oxide particles include fumed particles.