Organic light emitting display device and a method of manufacturing thereof

1. An organic light emitting device comprising:

a first substrate defining a pixel region and a non-pixel region;

an array of organic light emitting pixels formed over the pixel region of the first substrate;

a second substrate placed over the first substrate, the array being interposed between the first and second substrates;

a frit seal comprising a plurality of elongated segments interposed between the first and second substrates and disposed in the non-pixel region, the plurality of elongated segments in combination surrounding the array such that the array is encapsulated by the first substrate, the second substrate and the frit seal, the plurality of elongated segments comprising a first elongated segment elongated generally in a first direction;

a scan driver formed over the non-pixel region and comprising a semiconductive integrated circuit portion and a non-semiconductive integrated circuit portion, wherein the semiconductive integrated circuit portion and the first elongated segment extend generally parallel to each other without any one of the plurality of elongated segments interposed therebetween when viewed in a second direction from the first or second substrate, wherein the second direction defines the shortest distance between the first and second substrates, and wherein the first elongated segment does not overlap with the semiconductive integrated circuit portion and overlaps with the non-semiconductive integrated circuit portion when viewed in the second direction from the first or second substrate; and

a signal line portion, wherein the signal line portion comprises a plurality of conductive lines interconnecting the scan driver and the array, wherein the signal line portion is not formed over the pixel region, and wherein the first elongated segment overlaps with the signal line portion when viewed in the second direction from the first or second substrate,

wherein the semiconductive integrated circuit portion has a width defined in a third direction perpendicular to the first and second directions, and wherein the semiconductive integrated circuit portion and the first elongated segment have substantially no gap in the third direction when viewed in the second direction from the first or second substrate.

2. The device of claim 1 , wherein the semiconductive integrated circuit portion comprises interconnected semiconductive circuit elements.

3. The device of claim 2 , wherein the semiconductive circuit elements comprise thin film transistors.

4. The device of claim 1 , further comprising a planarization layer formed between the first substrate and the frit, and wherein the scan driver is substantially buried in the planarization layer.

5. The device of claim 1 , wherein the width is from about 0.02 mm to about 0.5 mm.

6. The device of claim 1 , wherein the scan driver comprises a routing portion interposed between the semiconductive integrated circuit portion and the signal line portion, and wherein the first elongated segment overlaps with the routing portion when viewed in the second direction from the first or second substrate.

7. The device of claim 1 , wherein the frit seal comprises one or more materials selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), lithium oxide (Li 2 O), sodium oxide (Na 2 O), potassium oxide (K 2 O), boron oxide (B 2 O 3 ), vanadium oxide (V 2 O 5 ), zinc oxide (ZnO), tellurium oxide (TeO 2 ), aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), lead oxide (PbO), tin oxide (SnO), phosphorous oxide (P 2 O 5 ), ruthenium oxide (Ru 2 O), rubidium oxide (Rb 2 O), rhodium oxide (Rh 2 O), ferrite oxide (Fe 2 O 3 ), copper oxide (CuO), titanium oxide (TiO 2 ), tungsten oxide (WO 3 ), bismuth oxide (Bi 2 O 3 ), antimony oxide (Sb 2 O 3 ), lead-borate glass, tin-phosphate glass, vanadate glass, and borosilicate.

8. A method of making an organic light emitting device, the method comprising:

providing a first substrate defining a pixel region and a non-pixel region;

forming an array of organic light emitting pixels over the pixel region of the first substrate;

forming a scan driver over the non-pixel region of the first substrate;

arranging a second substrate over the first substrate such that the array being interposed between the first and second substrates;

interposing a frit comprising a plurality of elongated segments between the first substrate and second substrate and in the non-pixel region, the plurality of elongated segments in combination surrounding the array, and the plurality of elongated segments comprising a first elongated segment elongated generally in a first direction;

wherein the scan driver comprises a semiconductive integrated circuit portion and a non-semiconductive integrated circuit portion, wherein the semiconductive integrated circuit portion and the first elongated segment extend generally parallel to each other without any one of the plurality of elongated segments interposed therebetween when viewed in a second direction from the first or second substrate, wherein the second direction defines the shortest distance between the first and second substrates, and wherein the first elongated segment does not overlap with the semiconductive integrated circuit portion and overlaps with the non-semiconductive integrated circuit portion when viewed in the second direction from the first or second substrate; and

wherein the device comprises a signal line portion, wherein the signal line portion comprises a plurality of conductive lines interconnecting the scan driver and the array, wherein the signal line portion is not formed over the pixel region, wherein the first elongated segment overlaps with the signal line portion when viewed in the second direction from the first or second substrate, wherein the semiconductive integrated circuit portion has a width defined in a third direction perpendicular to the first and second directions, and wherein the semiconductive integrated circuit portion and the first elongated segment have substantially no gap in the third direction when viewed in the second direction from the first or second substrate.

9. The method of claim 8 , wherein the semiconductive integrated circuit portion comprises interconnected semiconductive circuit elements.

10. The method of claim 8 , wherein the semiconductive circuit elements comprise thin film transistors.