Method of manufacturing an organic light emitting diode

1. A manufacturing method of an organic light emitting diode, comprising:

forming an anode on a substrate;

forming an inorganic buffer layer, the forming the inorganic buffer layer comprising forming a metal layer on the anode by thermal evaporation and subjecting the formed metal layer to heat treatment;

forming a hole transport layer on the buffer layer;

forming a light emission layer on the hole transport layer;

forming an electron transport layer on the light emission layer; and

forming a cathode on the electron transport layer.

2. The method of claim 1 , further comprising:

forming an electron injection layer between the light emission layer and the cathode.

3. The method of claim 1 , further comprising:

forming a hole injection layer between the inorganic buffer layer and the hole transport layer.

4. The method of claim 1 , wherein the inorganic buffer layer comprises at least one of Ni, Zn, and Mg.

5. The method of claim 1 , wherein the heat treatment is performed at about 550° C. to about 600° C.

6. The method of claim 1 , wherein the buffer layer has a thickness of about 5 nm to 10 nm.

7. The method of claim 1 , wherein the anode comprises indium tin oxide.

8. An organic light emitting diode comprising:

a first electrode formed on a substrate;

an inorganic buffer layer formed through forming a metal layer on the first electrode by thermal evaporation and subjecting the formed metal layer to heat treatment;

a first transport layer formed on the first electrodes;

a light emission layer formed on the first transport layers;

a second transport layer formed on the light emission layer;

a first injection layer formed on the second transport layer; and

a second electrode formed on the electron injection layer.

9. The organic light emitting diode of claim 8 , wherein

the first and second electrode are an anode and a cathode, respectively; and

the first and second transport layer are a hole transport layer and an electron transport layer, respectively.

10. The organic light emitting diode of claim 9 , wherein

the first injection layer is an electron injection layer.

11. The organic light emitting diode of claim 10 , further comprising a second injection layer disposed between the buffer layer and the hole transport layer, the second injection layer being a hole injection layer.

12. The organic light emitting diode of claim 8 , wherein the inorganic buffer layer comprises at least one of Ni, Zn, Mg and a combination including at least one of the foregoing.

13. The organic light emitting diode of claim 8 , wherein the heat treatment is performed at about 550° C. to about 600° C.

14. The organic light emitting diode of claim 8 , wherein the buffer layer has a thickness of about 5 nm to 10 nm.

15. The organic light emitting diode of claim 8 , wherein the first electrode comprises indium tin oxide.

16. An organic light emitting diode comprising:

a first electrode formed directly on a substrate;

an inorganic buffer layer formed directly on the first electrode;

a hole injection layer formed on the inorganic buffer layer such that the inorganic buffer layer is disposed between the hole injection layer and the first electrode;

a hole transport layer formed on the hole injection layer such that the hole injection layer is disposed between the hole transport layer and the inorganic buffer layer;

a light emission layer formed directly on the hole transport layer;

an electron transport layer formed directly on the light emission layer;

an electron injection layer formed directly on the electron transport layer; and

a second electrode formed directly on the electron injection layer.