Liquid crystal display device and method of fabricating the same
View Patent ↗A liquid crystal display device includes a plurality of data lines arranged along a first direction on a substrate, a plurality of gate lines arranged a second direction perpendicular to the first direction on the substrate to define a plurality of pixel regions, each of the gate lines having at least one first set of protrusions and depressions, a driving device within each of the pixel regions, a pixel electrode within each of the pixel regions, and a metal layer overlapping each of the gate lines to create a storage capacitor.
1. A liquid crystal display device, comprising:
a substrate;
a plurality of data lines and gate lines arranged on the substrate to define a plurality of pixel regions;
at least one protrusion or depression layer on the substrate;
a thin film transistor within each pixel region and including a gate electrode on the substrate, a gate insulating layer on the substrate, a semiconductor layer on the gate insulating layer, a source electrode and a drain electrode on the semiconductor layer;
a passivation layer on an entire surface of substrate; and
a pixel electrode on the passivation layer,
wherein a part of the gate electrode and a part of the semiconductor layer are formed in the shape of the surface of the protrusion or depression layer, thereby the gate electrode and the semiconductor layer have at least one protrusion or depressions formed along the protrusion or depression layer on the substrate.
2. The device according to claim 1 , wherein the protrusion/depression layer includes insulation material.
3. The device according to claim 1 , wherein the protrusion/depression layer includes metal material.
4. The device according to claim 1 , wherein the protrusion/depression layer is arranged along a direction between the source electrode and the drain electrode.
5. The device according to claim 1 , wherein the protrusion/depression layer is arranged having a lattice shape.
6. A liquid crystal display device, comprising:
a substrate;
a plurality of data lines and gate lines arranged in the substrate to define a plurality of pixel regions;
at least one groove formed in the substrate;
a thin film transistor within each pixel region and including a gate electrode on the substrate, a gate insulating layer on the substrate, a semiconductor layer on the gate insulating layer, a source electrode and a drain electrode on the semiconductor layer;
a passivation layer on an entire surface of substrate; and
a pixel electrode on the passivation layer,
wherein a part of the gate electrode and a part of semiconductor layer are formed in the shape of the surface of the groove , thereby the gate electrode and the semiconductor layer have at least one protrusion and depression formed along the groove in the substrate.
7. The device according to claim 6 , wherein the groove is formed along a direction between the source electrode and the drain electrode.
8. The device according to claim 6 , wherein the groove is arranged having a lattice shape.
9. The device according to claim 1 , further comprising a metal layer arranged along a direction of the gate line to form a storage capacitor.
10. The device according to claim 9 , further comprising a protrusion/depression layer arranged along a direction of the gate line.
11. The device according to claim 9 , further comprising a groove formed along a direction of the gate line.