IP Library Granted Patent US 7,569,851
Granted Patent B2
US 7,569,851 · App. 11/541,254 · Granted Aug 4, 2009

Organic thin film transistor array panels

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,569,851
App. No.
11/541,254
Granted
Aug 4, 2009
Kind
B2
Abstract

An organic thin film transistor (OTFT) array panel includes a substrate, a data line formed on the substrate, a source electrode connected with the data line, a drain electrode, including a portion facing the source electrode, an insulating layer formed on the source electrode and the drain electrode and having an opening and a contact hole, an organic semiconductor positioned in the opening and at least partially contacting the source electrode and the drain electrode, a gate insulator formed on the organic semiconductor, a stopper formed on the gate insulator, a gate line crossing over the data line and including a gate electrode formed on the stopper, and a pixel electrode connected to the drain electrode through the contact hole.

Claims (26)

1. An organic thin film transistor (OTFT) array panel, comprising:

a substrate,

a data line formed on the substrate;

a source electrode connected with the data line;

a drain electrode comprising a portion that faces the source electrode;

an insulating layer formed on the source electrode and the drain electrode and having an opening and a contact hole;

an organic semiconductor positioned in the opening and at least partially contacting with the source electrode and the drain electrode;

a gate insulator formed on the organic semiconductor;

a stopper formed on the gate insulator;

a gate line crossing over the data line and comprising a gate electrode formed on the stopper; and

a pixel electrode connected with the drain electrode through the contact hole.

2. The OTFT array panel of claim 1 , wherein the stopper and the pixel electrode comprise the same material.

3. The OTFT array panel of claim 2 , wherein the stopper and the pixel electrode comprise IZO or ITO.

4. The OTFT array panel of claim 3 , wherein the stopper and the pixel electrode are formed in different layers.

5. The OTFT array panel of claim 1 , wherein the source electrode and the drain electrode comprise IZO or ITO.

6. The OTFT array panel of claim 1 , wherein the gate electrode completely covers the stopper.

7. The OTFT array panel of claim 1 , further comprising a storage electrode formed on the layer on which the data line are formed.

8. The OTFT array panel of claim 7 , wherein the drain electrode comprises a portion that at least partially overlaps the storage electrode.

9. The OTFT array panel of claim 8 , further comprising

an interlayer insulating layer formed between the drain electrode and the storage electrode.

10. The OTFT array panel of claim 1 , further comprising a light blocking member positioned at a lower portion of the organic semiconductor and formed on the layer on which the data line are formed.

11. The OTFT array panel of claim 1 , wherein the insulating layer is formed over the entire surface of the substrate, excluding the opening and the contact hole.

12. The OTFT array panel of claim 1 , wherein the insulating layer comprises an organic material.

13. The OTFT array panel of claim 1 , wherein the gate insulator comprises an organic material.

14. The OTFT array panel of claim 1 , further comprising a protection member covering the gate electrode.

15. The OTFT array panel of claim 1 , wherein a surface of the insulating layer is hydrophobic and portions exposed through the opening and the contact hole are hydrophilic.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029008/0901 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2006
From: SONG, KEUN-KYU; CHOI, TAE-YOUNG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 018378/0095 →
Priority Claims (1)
KR 10-2005-0091862 · Sep 30, 2005 · national
Continuity (1)
Related Publication 20070158651A1 · Jul 12, 2007