Semiconductor imaging instrument and camera
View Patent ↗A semiconductor imaging instrument including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light, and a color filter layer provided on the imaging device array, with an infrared light absorbing dye being contained in the color filter layer, is disclosed.
1. A semiconductor imaging instrument comprising
a prescribed substrate;
an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light; and
a color filter layer provided on the imaging device array,
with an infrared light absorbing dye being contained in the color filter layer, wherein said absorbing dye contains 25 wt % of visible light absorbing dye and 25 wt % of the infrared light absorbing dye.
2. The semiconductor imaging instrument according to claim 1 , wherein a mixture in which a visible light absorbing dye material and an infrared light absorbing dye material are dispersed in a prescribed proportion in a desired resist material is used in the color filter layer containing an infrared light absorbing dye.
3. The semiconductor imaging instrument according to claim 2 , wherein a cyanine based dye which is configured by the following formula is used as the infrared light absorbing material:
4. The semiconductor imaging instrument according to claim 2 , wherein a squalium based dye which is configured by the following formula is used as the infrared light absorbing dye material:
5. A camera comprising
a prescribed substrate;
an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light;
a color filter layer provided on the imaging device array; and
a lens provided in a side of a light irradiation face of the color filter layer,
with an infrared light absorbing dye being contained in the color filter layer, wherein said absorbing dye contains 25 wt % of visible light absorbing dye and 25 wt % of the infrared light absorbing dye.