Semiconductor device
View Patent ↗A semiconductor device includes a semiconductor substrate, an electrode pad electrically connected to a circuit element formed on the semiconductor substrate, a connection wiring electrically connected to the electrode pad and extending on the semiconductor substrate, and a post electrode formed on the connection wiring. The semiconductor device further includes an adhesion film formed on the side surface of the post electrode, and a sealing layer that has light-shielding property and seals the surface of the adhesion film and the connection wiring.
1. A semiconductor device comprising:
a semiconductor substrate;
an electrode pad electrically connected to a circuit element formed on said semiconductor substrate;
a connection wiring electrically connected to said electrode pad and extending on said semiconductor substrate;
a post electrode formed on said connection wiring;
an adhesion film formed to cover a side surface of said post electrode, and
a sealing layer that has light-shielding property and seals the surface of said adhesion film and said connection wirings,
wherein said adhesion film exists between said side surface of said post electrode and said sealing layer.
2. The semiconductor device according to claim 1 , wherein said adhesion film is formed between said connection wiring and said sealing layer.
3. The semiconductor device according to claim 1 , wherein said adhesion film is provided between said connection wiring and said sealing layer, and said adhesion film extends into a joining portion where said post electrode and said connection wiring join with each other.
4. The semiconductor device according to claim 1 , wherein the thickness of said adhesion film is thicker than or equals to 5 μm, and thinner than or equals to 40 μm.
5. The semiconductor device according to claim 1 , wherein said adhesion film covering said side surface of said post electrode forms a conical surface whose diameter decreases toward an end of said post electrode.
6. The semiconductor device according to claim 1 , wherein said adhesion film is formed of polyimide resin.
7. The semiconductor device according to claim 1 , wherein said sealing layer is formed of thermosetting epoxy resin.
8. The semiconductor device according to claim 1 , wherein said adhesion film directly contacts and adheres to said post electrode and said sealing layer.
9. A semiconductor device comprising:
a semiconductor substrate;
an electrode pad electrically connected to a circuit element formed on said semiconductor substrate;
a connection wiring electrically connected to said electrode pad and extending on said semiconductor substrate;
a post electrode formed on said connection wiring;
an adhesion film formed to cover a side surface of said post electrode, and
a sealing layer that has light-shielding property and seals the surface of said adhesion film and said connection wiring,
wherein said adhesion film is formed between said connection wiring and said sealing layer.
10. A semiconductor device comprising:
a semiconductor substrate;
an electrode pad electrically connected to a circuit element formed on said semiconductor substrate;
a connection wiring electrically connected to said electrode pad and extending on said semiconductor substrate;
a post electrode formed on said connection wiring;
an adhesion film formed to cover a side surface of said post electrode, and
a sealing layer that has light-shielding property and seals the surface of said adhesion film and said connection wiring,
wherein said adhesion film is provided between said connection wiring and said sealing layer, and said adhesion film extends into a joining portion where said post electrode and said connection wiring join with each other.