IP Library Granted Patent US 7,298,042
Granted Patent B2
US 7,298,042 · App. 11/544,709 · Granted Nov 20, 2007

Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument

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Quick Facts
Patent No.
US 7,298,042
App. No.
11/544,709
Granted
Nov 20, 2007
Kind
B2
Abstract

A semiconductor device includes a semiconductor substrate in which an integrated circuit is formed and which includes interconnects and electrodes, the interconnects electrically connected with the semiconductor substrate, and the electrodes being formed on the interconnects; a resin layer formed on the semiconductor substrate; redistribution interconnects electrically connected with the electrodes; a plurality of external terminals which are formed on the redistribution interconnects and supported by the resin layer; and a plurality of dummy terminals supported by the resin layer without being electrically connected with the electrodes.

Claims (41)

1. A semiconductor device, comprising:

a semiconductor substrate; that includes an interconnect and an electrode;

an integrated circuit formed on the semiconductor substrate, the interconnect being electrically connected with the integrated circuit and the electrode;

a resin layer that is disposed above the semiconductor substrate;

a wiring pattern that is electrically connected with the electrode;

an external terminal that is disposed on the wiring pattern and overlaps the resin layer; and

a dummy terminal that is disposed above the resin layer so that the dummy terminal overlaps the resin layer without being electrically connected with the electrode, an entire portion of the dummy terminal overlapping the resin layer.

2. The semiconductor device as defined in claim 1 ,

the resin layer including an upper surface, a lower surface, an end portion, and a center,

the upper surface of the resin layer including a first region which is located in the end portion of the resin layer and a second region which is closer to the center of the resin layer than the first region,

the dummy terminal being disposed in the first region, and

the external terminal being disposed in the second region.

3. The semiconductor device as defined in claim 2 , the upper surface of the resin layer having a rectangular shape; and the dummy terminal being disposed at a corner of the upper surface.

4. The semiconductor device as defined in claim 2 ,

the upper surface of the resin layer having an oblong shape, and

the dummy terminal being disposed on an end of the oblong shape in a longitudinal direction.

5. The semiconductor device as defined in claim 1 ,

the dummy terminal being formed of a material different from a material for the external terminal.

6. The semiconductor device as defined in claim 1 ,

the dummy terminal including a center portion and a surface layer, the center portion being formed of resin, and the surface layer being formed of a solder.

7. The semiconductor device as defined in claim 1 ,

the dummy terminal being larger than the external terminal.

8. The semiconductor device as defined in claim 1 , further comprising:

a conductive film being disposed below the external terminal and the dummy terminal.

9. The semiconductor device as defined in claim 8 ,

the conductive film being disposed above the semiconductor substrate and below the resin layer.

10. The semiconductor device as defined in claim 8 ,

the conductive film being disposed to cover a region in which the integrated circuit is formed.

11. The semiconductor device as defined in claim 8 ,

the conductive film being divided into a plurality of sections provided at an interval from each other.

12. The semiconductor as defined in claim 11 ,

the integrated circuit being disposed in a region in which the plurality of sections of the conductive film are disposed.

13. The semiconductor device as defined in claim 8 ,

the conductive film being electrically connected with the dummy terminal without being electrically connected with the electrode.

14. A circuit board on which the semiconductor device as defined in claim 1 is mounted.

15. An electronic instrument including the semiconductor device as defined in claim 1 .

16. A method of manufacturing a semiconductor device, comprising:

forming a resin layer above a semiconductor substrate in which an integrated circuit is formed and which includes an interconnect and an electrode, the interconnect electrically connected with the integrated circuit and the electrode;

forming a wiring pattern so as to be electrically connected with the electrode;

forming an external terminal on the wiring pattern so as to overlap the resin layer; and

forming a dummy terminal above the resin layer so that the dummy terminal overlaps the resin layer without being electrically connected with the electrode, an entire portion of the dummy terminal overlapping the resin layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 4, 2019
From: SEIKO EPSON CORPORATION
To: 138 EAST LCD ADVANCEMENTS LIMITED
Reel/Frame 050265/0622 →