Stacked capacitor and method of fabricating same
View Patent ↗The invention relates to a stacked capacitor ( 10 ) comprising a silicon base plate ( 16 ), a poly-silicon center plate ( 32 ) arranged above the base plate ( 16 ), a lower gate-oxide dielectric ( 26 ) arranged between the base plate ( 16 ) and the center plate ( 32 ), a cover plate ( 36 ) made of a metallic conductor and arranged above the center plate ( 32 ), and an upper dielectric ( 34 ) arranged between the center plate ( 32 ) and the cover plate ( 36 ). The cover plate ( 36 ) and the base plate ( 16 ) are electrically connected to each other and together form a first capacitor electrode. The center plate ( 32 ) forms a second capacitor electrode. The invention further relates to an integrated circuit with such a stacked capacitor, as well as to a method for fabrication of a stacked capacitor as part of a CMOS process.
1. A method for fabrication of a stacked capacitor as part of a CMOS process, the method comprising the following steps:
applying a buried silicon layer on a substrate with a buried oxide insulating layer;
heavy n or p doping a portion of the buried silicon layer to form a base plate of the capacitor;
masking a connecting portion within the area of the base plate and forming a lower dielectric of the capacitor within the connecting portion when producing a gate-oxide layer as part of the CMOS process;
applying a poly-silicon layer in the area of the connecting portion to form a center plate of the capacitor;
forming an upper dielectric on the surface of the center plate;
applying a layer of a metallic conductor on the upper dielectric to form a cover plate of the capacitor.
2. The method according to claim 1 , wherein at least part of the poly-silicon layer is covered by a silicide layer prior to the formation of the upper dielectric.
3. The method according to claim 1 , wherein the upper dielectric is produced by the formation of an oxide layer.
4. The method according to claim 1 , wherein the upper dielectric is produced by the formation of a nitride layer.
5. The method according to claim 4 , wherein TiW is used as the metallic conductor for the formation of the cover plate.
6. The method according to claim 1 , wherein titanium nitride or a titanium alloy is used as the metallic conductor for the formation of the cover plate.