Electrical contacts for a semiconductor light emitting apparatus

1. A process for forming electrical contacts for a semiconductor light emitting apparatus, the light emitting apparatus having a first layer of first conductivity type, an active layer for generating light overlying the first layer, and a second layer of second conductivity type overlying the active layer, the process comprising:

forming at least a first elongate electrical contact and a second elongate electrical contact through the second layer and the active layer to provide electrical connection to the first layer, said first and second contacts being oriented at an angle to each other, said first contact having a first end in proximity with said second contact, said first end being sufficiently spaced apart from said second contact such that when current is supplied to the first layer through said contacts, current contributions from said first end of said first contact and said second contact in an area generally between said first end and said second contact cause a current density in said area that is approximately equal to a current density elsewhere along said first and second contacts;

wherein no electrical contact is located in the area between said first end and said second contact.

2. The process of claim 1 wherein said forming comprises forming said first and second contacts such that said first end of said first contact is proximate a first end of said second contact.

3. The process of claim 2 wherein said semiconductor light emitting apparatus comprises a generally rectangular semiconductor structure and wherein said forming comprises forming said contacts along adjacent peripheral edges of said semiconductor structure such that said first end of said first contact and said first end of said second contact are proximate a first corner of said semiconductor structure.

4. The process of claim 3 wherein said forming comprises forming electrical contacts along each of said peripheral edges of said rectangular semiconductor structure such that adjacent pairs of said contacts have spaced apart ends proximate respective corners of said generally rectangular semiconductor structure such that when current is supplied to the first layer through said contacts, current contributions from said respective spaced apart ends in an area generally between said spaced apart ends cause a current density in said area that is approximately equal to a current density elsewhere along said contacts.

5. The process of claim 4 further comprising forming at least one aperture through the second layer and the active layer and forming an electrical via contact to the first layer through said aperture, said aperture being spaced inwardly from said peripheral edges of said semiconductor structure.

6. The process of claim 5 further comprising interconnecting said electrical via contact and said at least said first and said second contacts to form a first electrode for supplying current to the first layer.

7. The process of claim 1 , wherein said forming comprises:

forming a channel having sidewalls and a bottom wall, said sidewalls extending through the second layer and the active layer, said bottom wall comprising a portion of said first layer;

insulating said sidewalls to prevent electrical contact to the second layer and the active layer by said first and second electrical contacts; and

depositing an electrically conductive material in said channel in electrical contact with the first layer such that said first end of said first contact is spaced apart from said second contact.

8. The process of claim 7 wherein said depositing comprises patterning said electrically conductive material to remove conductive material from at least said first end of said first contact to cause said first end of said first contact to be spaced apart from said second contact.

9. The process of claim 7 wherein said insulating comprises depositing a dielectric material proximate said first end of said first contact, said dielectric material being operable to insulate said first end from said second contact when depositing said electrically conductive material in said channel.

10. The process of claim 1 further comprising interconnecting said at least said first and said second contacts.

11. The process of claim 10 wherein said interconnecting comprises forming an interconnecting layer between said elongate electrical contacts, said interconnecting layer overlying at least a portion of the second layer and being insulated therefrom.

12. The process of claim 1 wherein said forming comprises forming said electrical contacts by removing portions of the second layer and the active layer.

13. A semiconductor structure for use in a semiconductor light emitting apparatus, the structure comprising:

a first layer having a first conductivity type;

an active layer for generating light, said active layer overlying said first layer;

a second layer having a second conductivity type, said second layer overlying said active layer;

at least a first and a second elongate electrical contact extending through said second layer and said active layer and in electrical contact with said first layer, said first and second contacts being oriented at an angle to each other, said first contact having a first end proximate said second contact, said first end being sufficiently spaced apart from said second contact such that when current is supplied to the first layer through said contacts, current contributions from said first end of said first contact and said second contact in an area generally between said first end and said second contact cause a current density in said area that is approximately equal to a current density elsewhere along said first and second contacts;

wherein no electrical contact is located in the area between said first end and said second contact.

14. The structure of claim 13 wherein said first end of said first contact is proximate a first end of said second contact.

15. The structure of claim 14 wherein said semiconductor light emitting structure comprises a generally rectangular semiconductor structure and wherein said first contact extends along a first peripheral edge of said semiconductor structure and said second contact extends along a second adjacent peripheral edge of said semiconductor structure such that said first end of said first contact and said first end of said second contact are proximate a first corner of said semiconductor structure.

16. The structure of claim 15 further comprising a third elongate electrical contact extending along a third peripheral edge of said semiconductor structure and a fourth elongate electrical contact extending along a fourth peripheral edge of said semiconductor structure such that adjacent pairs of said first, second, third, and fourth contacts have spaced apart ends proximate respective corners of said generally rectangular semiconductor structure such that when current is supplied to the first layer through said contacts, current contributions from said respective spaced apart ends in an area generally between said spaced apart ends cause a current density in said area that is approximately equal to a current density elsewhere along said contacts.

17. The structure of claim 16 further comprising:

at least one aperture extending through said second layer and said active layer, said aperture being spaced inwardly from said peripheral edges of said semiconductor structure;

an electrical via contact extending through said aperture and in electrical contact with said first layer.

18. The structure of claim 17 further comprising an interconnect between said electrical via contact and said at least said first and said second contacts, said interconnect being operable to facilitate supplying current to said first layer.

19. The structure of claim 13 , wherein each elongate electrical contact comprises:

a channel having sidewalls and a bottom wall, said sidewalls extending through said second layer and said active layer, said bottom wall comprising a portion of said first layer;

an electrically conductive material in said channel and in electrical contact with said first layer; and

a dielectric material between said electrically conductive material and said sidewalls, said dielectric material being operable to prevent electrical contact to said second layer and said active layer by said first and second contacts.

20. The structure of claim 13 further comprising an interconnect between said at least said first and said second contacts, said interconnect being operable to facilitate supplying current to said first layer.

21. The structure of claim 20 wherein said interconnect comprises interconnect portions overlying at least a first portion of said second layer, said interconnect portions being insulated from the second layer.

22. The structure of claim 13 wherein said first layer comprises an n-type semiconductor material and said second layer comprises a p-type semiconductor material.

23. A semiconductor light emitting apparatus comprising the semiconductor structure of claim 13 and further comprising a first electrode in electrical contact with said at least said first and said second electrical contacts and a second electrode in electrical contact with said second layer, whereby light is generated in said active layer when a voltage is applied between said first electrode and said second electrode such that a forward bias current flows through said active layer.