Solid-state imaging device, method of driving solid-state imaging device, and imaging apparatus

1. A solid-state imaging device comprising:

(a) a pixel array unit including unit pixels arranged in a matrix, each of the unit pixels having

(1) a photoelectric conversion element that converts a light signal to a signal charge,

(2) an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and

(3) a capacitive element with one side connected to a control electrode of the amplifying transistor;

(b) a driving unit configured to selectively supply a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element; and

(c) a signal processing circuit that performs a predetermined signal processing with respect to a signal output from each pixel of the pixel array unit,

wherein,

the driving unit repeatedly performs an operation that causes the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while the signal is being read out from the unit pixel by the driving unit.

2. The solid-state imaging device according to claim 1 , wherein the signal processing circuit comprises (1) a sample and hold circuit, configured to sample and hold a signal output from the unit pixel through the amplifying transistor, or (2) a noise elimination circuit that includes the sample and hold circuit and eliminates a noise included in the signal output through the amplifying transistor.

3. The solid-state imaging device according to claim 2 , wherein the driving means is configured to repeatedly supply the predetermined voltage to the other end of the capacitive element when the sample and hold circuit is in a hold state.

4. A solid-state imaging device comprising:

a pixel array unit including unit pixels arranged in a matrix, each of the unit pixels having a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor;

a driving unit configured to repeatedly perform an operation of causing the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while a signal is being read out from the unit pixel by the driving unit which selectively supplies a predetermined voltage to the other side of the capacitive element; and

a band limiting circuit configured to perform a band limiting operation with respect to the signal output from the unit pixel through the amplifying transistor.

5. The solid-state imaging device according to claim 4 , wherein:

the unit pixel further includes a capacitive element with one side connected to a control electrode of the amplifying transistor, and

the driving unit is configured to repeatedly supply a predetermined voltage to the other side of the capacitive element once or a plural number of times.

6. A method of driving a solid-state imaging device in which unit pixels are arranged in a matrix and each of the unit pixels has a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor, comprising the step of:

repeatedly causing the amplifying transistor to be in an OFF state or a deep accumulation state by selectively supplying a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element.

7. A method of driving a solid-state imaging device in which unit pixels are arranged in a matrix and each of the unit pixels has a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor, comprising the steps of:

repeatedly performing an operation of causing the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while a signal is being read out from the unit pixel by a driving unit which selectively supplies a predetermined voltage to the capacitive element by a pulse supply line directly connected to the other side of the capacitive element; and

performing a band limiting operation with respect to a signal output from the unit pixel through the amplifying transistor.

8. An imaging apparatus comprising:

a solid-state imaging device in which unit pixels are arranged in a matrix and each of the unit pixels has a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor; and

an optical system configured to guide light from a photographic subject onto an imaging surface of the solid-state imaging device,

wherein,

the solid-state imaging device includes

(a) a driving unit configured to selectively supply a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element; and

(b) a signal processing circuit configured to perform a predetermined signal processing with respect to a signal output from each of the unit pixels,

and wherein,

the driving unit repeatedly performs an operation that causes the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while the signal is being read out from the unit pixel by the driving unit.

9. An imaging apparatus comprising:

a solid-state imaging device in which unit pixels are arranged in a matrix and each of the unit pixels has a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor; and

an optical system configured to guide light from a photographic subject onto an imaging surface of the solid-state imaging device,

wherein the solid-state imaging device includes

(a) a driving unit configured to repeatedly perform an operation of causing the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while a signal is being read out from the unit pixel by the driving unit which selectively supplies a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element; and

(b) a band limiting circuit configured to perform a band limiting operation with respect to a signal output from the unit pixel through the amplifying transistor.

10. A solid-state imaging device comprising:

a pixel array unit including unit pixels arranged in a matrix, each of the unit pixels having a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element whose one end is connected to a control electrode of the amplifying transistor;

a driving section configured to selectively supply a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element; and

a signal processing circuit configured to perform a predetermined signal processing with respect to a signal output from each pixel of the pixel array unit,

wherein,

the driving unit repeatedly performs an operation that causes the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while the signal is being read out from the unit pixel by the driving unit.

11. A solid-state imaging device comprising:

a pixel array unit including unit pixels arranged in a matrix, each of the unit pixels having a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor;

a driving section configured to repeatedly perform an operation of causing the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while a signal is being read out from the unit pixel by the driving unit which selectively supplies a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element; and

a band limiting circuit configured to perform a band limiting operation with respect to a signal output from the unit pixel through the amplifying transistor.

12. An imaging apparatus comprising:

a solid-state imaging device in which unit pixels are arranged in a matrix and each of the unit pixels has a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor; and

an optical system configured to guide light from a photographic subject onto an imaging surface of the solid-state imaging device,

wherein the solid-state imaging device includes

(a) a driving section configured to selectively supply a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element; and

(b) a signal processing circuit configured to perform a predetermined signal processing with respect to a signal output from each of the unit pixels,

and wherein,

the driving unit repeatedly performs an operation that causes the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while the signal is being read out from the unit pixel by the driving unit.

13. An imaging apparatus comprising:

a solid-state imaging device in which unit pixels are arranged in a matrix and each of the unit pixels has a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element with one side connected to a control electrode of the amplifying transistor; and

an optical system configured to guide light from a photographic subject onto an imaging surface of the solid-state imaging device,

wherein the solid-state imaging device includes

a driving section configured to repeatedly perform an operation of causing the amplifying transistor to be in an OFF state or a deep accumulation state once or a plural number of times for a period of time while a signal is being read out from the unit pixel by the driving section which selectively supplies a predetermined voltage to the capacitive element via a pulse supply line directly connected to the other side of the capacitive element; and

a band limiting circuit configured to perform a band limiting operation with respect to a signal output from the unit pixel through the amplifying transistor.