Light-emitting device and electronic apparatus having a power source line that overlaps a capacitor element
A light-emitting device includes a drive transistor for controlling the quantity of current supplied to a light-emitting element, a capacitor element electrically connected to a gate electrode of the drive transistor, and an electrical continuity portion for electrically connecting the drive transistor and the light-emitting element, these elements being disposed on a substrate. The electrical continuity portion is disposed on the side opposite to the capacitor element with the drive transistor disposed therebetween.
1. A light-emitting device, comprising: above a substrate, a first transistor including a semiconductor layer which has a channel region and a gate electrode which overlaps the channel region in plan view, the first transistor electrically connected between a light-emitting element and a power source line, a capacitor element electrically connected to the gate electrode of the first transistor, and an electrical continuity portion electrically connected to the first transistor and the light-emitting element,
the power source line overlapping the capacitor element in plan view, and being extended in a first direction,
in the first direction, the gate electrode which overlaps the channel region in plan view being positioned between the electrical continuity portion and the capacitor element in plan view,
the light-emitting element having a first electrode electrically connected to the electrical continuity portion, and
the first electrode having a portion overlapping at least one of the first transistor and the capacitor element in plan view, and the portion overlapping the power source line and the capacitor element in plan view.
2. The light-emitting device as set forth in claim 1 ,
a gate insulating layer being disposed between the channel region and the gate electrode,
the capacitor element including a third electrode electrically connected to the gate electrode, a fourth electrode facing the third electrode, and a first insulating layer disposed between the third and fourth electrodes,
the first insulating layer covering the gate electrode and the third electrode, and the electrical continuity portion being formed above the first insulating layer.
3. The light-emitting device as set forth in claim 2 ,
the third electrode and the gate electrode being formed in a first layer.
4. The light-emitting device as set forth in claim 3 ,
the semiconductor layer and the fourth electrode being formed in a second layer.
5. The light-emitting device as set forth in claim 1 , further comprising:
a selection transistor that is placed in an on state or an off state in response to a selection signal,
the gate electrode of the first transistor being set at a potential according to a data signal that is supplied from a data line through the selection transistor that has been placed in the on state, and
the capacitor element being positioned between the selection transistor and the first transistor in plan view.
6. The light-emitting device as set forth in claim 1 , further comprising:
a second transistor that is electrically connected between the gate electrode of the first transistor and a drain of the first transistor, and
the capacitor element being positioned between the first transistor and the second transistor in plan view.
7. The light-emitting device as set forth in claim 6 ,
a selection transistor being positioned between the capacitor element and the second transistor in plan view,
a connecting portion being electrically connected to the second transistor and the gate electrode of the first transistor, and
the gate electrode of the selection transistor and the connecting portion not having an overlapping portion in plan view.
8. The light-emitting device as set forth in claim 7 ,
the selection transistor including first and second gate electrodes, and
the connecting portion being positioned between the first and second gate electrodes.
9. The light-emitting device as set forth in claim 1 , the capacitor element including a third electrode electrically connected to the gate electrode of the first transistor and a fourth electrode opposed to the third electrode,
the third electrode and the gate electrode being disposed in a first layer.
10. A light-emitting device, comprising: above a substrate, a first transistor including a semiconductor layer which has a channel region and a gate electrode which overlaps the channel region in plan view, the first transistor electrically connected between a light-emitting element and a power source line, a capacitor element electrically connected to the gate electrode of the first transistor, and an electrical continuity portion electrically connected to the first transistor and the light-emitting element,
the power source line overlapping the capacitor element in plan view, and being extended in a first direction,
in a direction intersecting the first direction, the electrical continuity portion being positioned on one side with respect to the gate electrode which overlaps the channel region in plan view,
the capacitor element being positioned on another side with respect to the gate electrode which overlaps the channel region in plan view,
the light-emitting element having a first electrode electrically connected to the electrical continuity portion, and
the first electrode having a portion overlapping at least one of the first transistor and the capacitor element in plan view, and the portion overlapping the power source line and the capacitor element in plan view.
11. The light-emitting device as set forth in claim 10 ,
a gate insulating layer being disposed between the channel region and the gate electrode,
the capacitor element including a third electrode electrically connected to the gate electrode, a fourth electrode facing the third electrode, and a first insulating layer disposed between the third and fourth electrodes,
the first insulating layer covering the gate electrode and the third electrode, and the electrical continuity portion being formed above the first insulating layer.
12. The light-emitting device as set forth in claim 11 ,
the third electrode and the gate electrode being formed in a first layer.
13. The light-emitting device as set forth in claim 12 ,
the semiconductor layer and the fourth electrode being formed in a second layer.
14. The light-emitting device as set forth in claim 10 , further comprising:
a selection transistor that is placed in an on state or an off state in response to a selection signal,
the gate electrode of the first transistor being set at a potential according to a data signal that is supplied from a data line through the selection transistor that has been placed in the on state, and
the capacitor element being positioned between the selection transistor and the first transistor in plan view.
15. The light-emitting device as set forth in claim 10 , further comprising:
a second transistor that is electrically connected between the gate electrode of the first transistor and a drain of the first transistor, and
the capacitor element being positioned between the first transistor and the second transistor in plan view.
16. The light-emitting device as set forth in claim 15 ,
a selection transistor being positioned between the capacitor element and the second transistor in plan view,
a connecting portion being electrically connected to the second transistor and the gate electrode of the first transistor, and
the gate electrode of the selection transistor and the connecting portion not having an overlapping portion in plan view.
17. The light-emitting device as set forth in claim 16 ,
the selection transistor including first and second gate electrodes, and
the connecting portion being positioned between the first and second gate electrodes.
18. The light-emitting device as set forth in claim 10 , the capacitor element including a third electrode electrically connected to the gate electrode of the first transistor and a fourth electrode opposed to the third electrode,
the third electrode and the gate electrode being disposed in a first layer.
19. An electronic device, comprising:
a light-emitting device, comprising: above a substrate, a first transistor including a semiconductor layer which has a channel region and a gate electrode which overlaps the channel region in plan view, the first transistor electrically connected between a light-emitting element and a power source line, a capacitor element electrically connected to the gate electrode of the first transistor, and an electrical continuity portion electrically connected to the first transistor and the light-emitting element,
the power source line overlapping the capacitor element in plan view, and being extended in a first direction,
in the first direction, the gate electrode which overlaps the channel region being positioned between the electrical continuity portion and the capacitor element in plan view,
the light-emitting element having a first electrode electrically connected to the electrical continuity portion, and
the first electrode having a portion overlapping at least one of the first transistor and the capacitor element in plan view, and the portion overlapping the power source line and the capacitor element in plan view.
20. An electronic device, comprising:
a light-emitting device, comprising: above a substrate, a first transistor including a semiconductor layer which has a channel region and a gate electrode which overlaps the channel region in plan view, the first transistor electrically connected between a light-emitting element and a power source line, a capacitor element electrically connected to the gate electrode of the first transistor, and an electrical continuity portion electrically connected to the first transistor and the light-emitting element,
the power source line overlapping the capacitor element in plan view, and being extended in a first direction,
in the first direction, the electrical continuity portion being positioned on one side with respect to the gate electrode which overlaps the channel region in plan view,
the capacitor element being positioned on another side with respect to the gate electrode which overlaps the channel region in plan view,
the light-emitting element having a first electrode electrically connected to the electrical continuity portion, and
the first electrode having a portion overlapping at least one of the first transistor and the capacitor element in plan view, and the portion overlapping the power source line and the capacitor element in plan view.
21. A light-emitting device, comprising: above a substrate, a first transistor including a semiconductor layer which has a channel region and a gate electrode which overlaps the channel region in plan view, the first transistor electrically connected between a light-emitting element and a power source line, a capacitor element electrically connected to the gate electrode of the first transistor, and an electrical continuity portion electrically connected to the first transistor and the light-emitting element,
the power source line overlapping the capacitor element in plan view, and being extended in a first direction,
in a direction intersecting the first direction, the gate electrode which overlaps the channel region in plan view being positioned between the electrical continuity portion and the capacitor element in plan view,
the light-emitting element having a first electrode electrically connected to the electrical continuity portion, and
the first electrode having a portion overlapping at least one of the first transistor and the capacitor element in plan view, and the portion overlapping the power source line and the capacitor element in plan view.
22. A light-emitting device, comprising: above a substrate, a first transistor including a semiconductor layer which has a channel region and a gate electrode which overlaps the channel region in plan view, the first transistor electrically connected between a light-emitting element and a power source line, a capacitor element electrically connected to the gate electrode of the first transistor, and an electrical continuity portion electrically connected to the first transistor and the light-emitting element,
the power source line overlapping the capacitor element in plan view, and being extended in a first direction,
in a direction intersecting the first direction, the electrical continuity portion being positioned on one side with respect to the gate electrode which overlaps the channel region in plan view,
the capacitor element being positioned on another side with respect to the gate electrode which overlaps the channel region in plan view,
the light-emitting element having a first electrode electrically connected to the electrical continuity portion, and
the first electrode having a portion overlapping at least one of the first transistor and the capacitor element in plan view, and the portion overlapping the power source line and the capacitor element in plan view.