Photoresist composition and method of manufacturing a thin-film transistor substrate using the same
View Patent ↗A photoresist composition includes about 100 parts by weight of resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of naphthoquinone diazosulfonic acid ester. A weight-average molecular weight of the novolak resin is no less than about 30,000. A weight-average molecular weight of the acryl resin is no less than about 20,000. The acryl resin makes up about 1% to about 15% of the total weight of the resin mixture. When a photoresist film formed using the photoresist composition is heated, a profile variation of the photoresist composition is relatively small. Therefore, a residual photoresist film has a uniform thickness, and a short circuit and/or an open defect in a TFT substrate may be reduced.
1. A method of manufacturing a thin-film transistor substrate, the method comprising:
forming a gate line on a base substrate,
sequentially forming a gate insulating layer, a semiconductor layer and a data layer on the gate line and the base substrate;
coating a photoresist composition on the data layer to form a photoresist film, the photoresist composition comprising about 100 parts by weight of a resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of a naphthoquinone diazosulfonic acid ester;
patterning the photoresist film to form a photoresist pattern;
firstly etching the data layer by using the photoresist pattern as a mask;
etching the semiconductor layer by using an etched data layer;
heating the photoresist pattern to form a heated photoresist pattern after etching the semiconductor layer by using the etched data layer; and
secondly etching the data layer by using the heated photoresist pattern as a mask.
2. The method of claim 1 , wherein a weight-average molecular weight of the novolak resin is no less than about 30,000.
3. The method of claim 1 , wherein a weight-average molecular weight of the acryl resin is no less than about 20,000.
4. The method of claim 3 , wherein the acryl resin comprises about 1% to about 15% of the total weight of the resin mixture.