Vertical cavity surface emitting laser including trench and proton implant isolation
View Patent ↗A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. The trench is formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region. The trench is etched approximately to the first conduction layer region. Proton implants are provided in the wagon wheel and configured to render the spokes of the wagon wheel insulating. A nearly planar electrical contact is formed as an intracavity contact for connecting the bottom of the active region to a power supply. The nearly planar electrical contact is formed in and about the trench.
1. A VCSEL, the VCSEL comprising:
a substrate;
a bottom conduction layer region on the substrate,
an active layer region on the bottom conduction layer;
a trench formed into the active layer region, the trench being formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region, the trench being etched approximately to the bottom conduction layer;
implants in the wagon wheel configured to render the wagon wheel spokes insulating; and
a nearly planar electrical contact formed as an intracavity contact for connecting the bottom of the active region to a power source, the nearly planar electrical contact being formed in and about the trench.
2. The VCSEL as recited in claim 1 , wherein the trench is formed in an asymmetric form.
3. The VCSEL as recited in claim 2 , wherein the trench is formed as an oval.
4. The VCSEL as recited in claim 1 , further comprising dielectric mirrors above and below the active region.
5. The VCSEL as recited in claim 1 , further comprising semiconductor mirrors above and below the active region.
6. The VCSEL as recited in claim 1 , wherein the VCSEL is designed to operate at wavelengths above about 1260 nm.
7. The VCSEL as recited in claim 1 , wherein the VCSEL is designed to operate at wavelengths above about 750 nm.
8. The VCSEL as recited in claim 1 , wherein the nearly planar electrical contact is formed completely around the trench.
9. The VCSEL as recited in claim 1 , wherein the nearly planar electrical contact is formed as a single spoke keyhole design.
10. A method of fabricating a VCSEL comprising:
forming a bottom mirror on a substrate wherein forming a bottom mirror comprises forming alternating layers of materials with different indices of refraction;
forming a first conduction layer region on the bottom mirror;
forming an active layer region that contains quantum wells on the first conduction layer region;
forming a second conduction layer region on the active layer region, the second conduction layer region coupled to the active layer region;
forming a top mirror on the second conduction layer region;
forming a trench into the active layer region, the trench being formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region, the trench being etched approximately to the bottom conduction layer;
implanting into the wagon wheel configured to render the wagon wheel spokes insulating; and
forming a nearly planar electrical contact as an intracavity contact for connecting the bottom of the active region to a power source, the nearly planar electrical contact being formed in and about the trench.
11. The method as recited in claim 10 , wherein the trench is formed in an asymmetric form.
12. The method as recited in claim 11 , wherein the trench is formed as an oval.
13. The method as recited in claim 10 , wherein forming a bottom mirror and forming a top mirror comprises forming dielectric mirrors above and below the active region.
14. The method as recited in claim 10 , wherein forming a bottom mirror and forming a top mirror comprises forming semiconductor mirrors above and below the active region.
15. The method as recited in claim 10 , wherein the VCSEL is designed to operate at wavelengths above about 1260 nm.
16. The method as recited in claim 10 , wherein the VCSEL is designed to operate at wavelengths above about 750 nm.
17. The method as recited in claim 10 , wherein the nearly planar electrical contact is formed completely around the trench.
18. The method as recited in claim 10 , wherein the nearly planar electrical contact is formed as a single spoke keyhole design.
19. The method of claim 10 , wherein forming a top mirror and forming a bottom mirror comprises forming alternating layers of AlAs and GaAs.