Multi-piece ceramic crucible and method for making thereof
View Patent ↗A unibody, multi-piece crucible for use in for use in elemental purification, compounding, and growth of semi-conductor crystals, e.g., in the process of molecular beam epitaxy (MBE) for melting silicon and the like at high temperature. The crucible has an outer coating layer that fixedly joins the multi pieces making up the crucible. The invention also provides a method for making a unibody containing structure comprising pyrolytic boron nitride having a negative draft, which method obviates the need of complicated overhang structure of graphite mandrels or the removal of the graphite mandrels by burning at high temperatures.
1. A crucible for making crystals of a semiconductor material, the crucible comprising:
a closed end, an open end, a length extending from the open end to the close end;
a circumference in-between the length extending from the open end to the close end; and
an internal surface and an external surface, wherein the crucible comprises:
at least two parts, a base part and a top part, that are joined together at the circumference forming a joint, wherein the at least two parts are made of a material which is inert, corrosion resistant, and heat stable in a process for making crystals of a semiconductor material; and
the crucible is provided with a pyrolytic boron nitride coating layer contacting at least a portion of the internal surface or a portion of the external surface, wherein the coating layer fixedly joins the parts by hermetically sealing the joint.
2. The crucible of claim 1 , wherein each of the at least two parts is of equal circumference for the two parts to abut each other at the joint.
3. The crucible of claim 1 , wherein each of the at least two parts is of different circumference for the two parts to overlap each other at the joint.
4. The crucible of claim 1 , wherein the crucible is provided with a coating layer having a thickness of 0.005 mm to 0.025 mm to hermetically sealing the joint between the at least two parts.
5. The crucible of claim 4 , wherein the coating layer coats the entire external surface of the crucible.
6. The crucible of claim 4 , wherein the coating layer coats the joint between the at least two parts of the crucible and at least part of the external surface of the crucible.
7. The crucible of claim 1 , wherein the at least two parts are made of pyrolytic boron nitride.
8. The crucible of claim 1 , wherein the base part is substantially cylindrical in shape, and the top part is substantially conical in shape.
9. The crucible of claim 1 , wherein crucible has a substantially uniform wall thickness between 0.03 cm to 0.23 cm thick.
10. The crucible of claim 1 , wherein the crucible further comprises a pyrolytic graphite coating on at least a portion of the external or internal surface of the crucible.
11. The crucible of claim 10 , wherein the crucible further comprises a continuous surface coating of pyrolytic graphite, wherein the coating of pyrolytic graphite receives an RF signal and heats the crucible up to a temperature of at least 1450° C. in at least 10% less time than a crucible without the pyrolytic graphite coating layer.
12. The crucible of claim 10 , wherein the coating of pyrolytic graphite is patterned forming a predetermined geometry, the coating of pyrolytic graphite is provided with at least two separate ends adapted for forming at least an electrode for receiving DC or AC current to heat the crucible.
13. A crucible for making crystals of a semiconductor material, the crucible comprising:
a closed end, an open end, a length extending from the open end to the close end;
a circumference in-between the length extending from the open end to the close end; and
an internal surface and an external surface, wherein the crucible comprises:
at least two distinct and separate parts, a base part and a top part, that are subsequently joined together at the circumference forming a joint, wherein the at least two parts are made of a material which is inert, corrosion resistant, and heat stable in a process for making crystals of a semiconductor material; and
the crucible is provided with a pyrolytic boron nitride coating layer contacting at least a portion of the internal surface, wherein the coating layer fixedly joins the at least two distinct and separate parts by hermetically sealing the circumferential joint.
14. The crucible of claim 13 , wherein each of the at least two parts is of equal circumference for the two parts to abut each other at the joint.
15. The crucible of claim 13 , wherein each of the at least two parts is of different circumference for the two parts to overlap each other at the joint.
16. The crucible of claim 13 , wherein the crucible is provided with a coating layer having a thickness of 0.005 mm to 0.025 mm to hermetically sealing the joint between the at least two parts.
17. The crucible of claim 13 , wherein the at least two parts are made of pyrolytic boron nitride.
18. The crucible of claim 13 , wherein the base part is substantially cylindrical in shape, and the top part is substantially conical in shape.
19. The crucible of claim 13 , wherein crucible has a substantially uniform wall thickness between 0.03 cm to 0.23 cm thick.
20. The crucible of claim 13 , wherein the crucible further comprises a pyrolytic graphite coating on at least a portion of the external or internal surface of the crucible.
21. The crucible of claim 20 , wherein the outer surface of the crucible is coated with pyrolytic graphite, and the pyrolytic graphite coating layer is patterned forming a predetermined geometry, the pyrolytic graphite coating layer is provided with at least two separate ends adapted for forming at least an electrode for receiving DC or AC current to heat the crucible.