Solid-state imaging device and method of manufacturing the same
View Patent ↗A solid-state imaging device includes: a semiconductor substrate; a plurality of photoelectric conversion elements that are arranged in a matrix form on the semiconductor substrate; and color filter layers of a plurality of colors that are formed in a predetermined pattern above the photoelectric conversion elements. A green color filter portion having a predetermined width is formed above a boundary region between each pair of adjacent ones of the photoelectric conversion elements so as to have a cross section of a mountain shape or a trapezoidal shape. Each of the color filter layers is formed between respective ridgelines of adjacent ones of the green color filter portions. Each of the color filter layers has a thickness that is smaller at a peripheral portion corresponding to a ridgeline portion than at a central portion. Thus, a solid-state imaging device that prevents color mixture caused by light from an adjacent color filter layer and remedies the problems of line shading, variations in sensitivity and color irregularity and a method of manufacturing the same are provided.
1. A solid-state imaging device, comprising:
a semiconductor substrate;
a plurality of photoelectric conversion elements that are arranged on the semiconductor substrate; and
color filter layers of a plurality of colors that are formed in a predetermined pattern above the plurality of photoelectric conversion elements,
wherein a green color filter portion having a predetermined width is formed above a boundary region between each pair of adjacent ones of the photoelectric conversion elements so as to have a cross section of a mountain shape or a trapezoidal shape,
each of the color filter layers of a plurality of colors is formed between respective ridgelines of the green color filter portions so as to have a thickness that is smaller at a peripheral portion positioned in a ridgeline portion of the green color filter portion than at a central portion, and
the green color filter portion is formed with a dye-internally-added color resist.
2. The solid-state imaging device according to claim 1 ,
wherein the green color filter portion is formed so as to have a thickness equal to or smaller than a thickness at a central portion of the color filter layers.
3. The solid-state imaging device according to claim 2 ,
wherein the green color filter portion is formed so as to have a width equal to or smaller than a width of a light-blocking film that is formed on a transfer electrode formed above the boundary region between each pair of adjacent ones of the photoelectric conversion elements.
4. The solid-state imaging device according to claim 1 ,
wherein the green color filter portion is formed so as to have a width equal to or smaller than a width of a light-blocking film that is formed on a transfer electrode formed above the boundary region between each pair of adjacent ones of the photoelectric conversion elements.
5. The solid-state imaging device according to claim 1 , wherein the color filter layer is formed with a pigment-dispersed color resist.
6. The solid-state imaging device according to claim 1 , wherein the color filter layer is formed with a dye-internally-added color resist.
7. The solid-state imaging device according to claim 1 , wherein a bottom face of the green color filter portion and a bottom face of the color filter layer are formed to be flush with each other.
8. A solid-state imaging device, comprising:
a semiconductor substrate;
a plurality of photoelectric conversion elements that are arranged in a matrix form on the semiconductor substrate; and
color filter layers of a plurality of colors that are formed in a predetermined pattern above the plurality of photoelectric conversion elements,
wherein a green color filter portion having a predetermined width is formed above a boundary region between each pair of adjacent ones of the photoelectric conversion elements so as to form a lattice when viewed in a plan view and have a cross section of a mountain shape or a trapezoidal shape,
each of the color filter layers of a plurality of colors is formed in a rectangular region interposed between respective ridgelines of the green color filter portions, and
the green color filter portion is formed with a dye-internally-added color resist.
9. The solid-state imaging device according to claim 8 ,
wherein each of the color filter layers is formed so as to have a thickness that is smaller at a peripheral portion positioned in a ridgeline portion of the green color filter portion than at a central portion.
10. The solid-state imaging device according to claim 9 ,
wherein the green color filter portion is formed so as to have a thickness equal to or smaller than a thickness at a central portion of the color filter layers.
11. The solid-state imaging device according to claim 9 ,
wherein the green color filter portion is formed so as to have a width equal to or smaller than a width of a light-blocking film that is formed on a transfer electrode formed above the boundary region between each pair of adjacent ones of the photoelectric conversion elements.
12. The solid-state imaging device according to claim 8 ,
wherein the green color filter portion is formed so as to have a thickness equal to or smaller than a thickness at a central portion of the color filter layers.
13. The solid-state imaging device according to claim 8 ,
wherein the green color filter portion is formed so as to have a width equal to or smaller than a width of a light-blocking film that is formed on a transfer electrode formed above the boundary region between each pair of adjacent ones of the photoelectric conversion elements.
14. A solid-state imaging device, comprising:
a semiconductor substrate;
a plurality of photoelectric conversion elements that are arranged on the semiconductor substrate; and
color filter layers of a plurality of colors that are formed in a predetermined pattern above the plurality of photoelectric conversion elements,
wherein a filter portion having a predetermined width is formed above a boundary region between each pair of adjacent ones of the photoelectric conversion elements, and each of the color filter layers of a plurality of colors is formed between each pair of adjacent ones of the filter portions,
the filter portion is formed with a dye-internally-added color resist, and
the filter portion is formed so as to have a width equal to or smaller than a width of a light-blocking film that is formed on a transfer electrode formed above the boundary region between each pair of adjacent ones of the photoelectric conversion elements.
15. The solid-state imaging device according to claim 14 , wherein a bottom face of the filter portion and a bottom face of the color filter layer are formed to be flush with each other.