Single spatial mode output multi-mode interference laser diode with external cavity
View Patent ↗The invention relates to a conventional broad-area laser having a single-mode output through the phenomenon of multimode interference (MMI) in step-index waveguides. Another aspect of the present invention relates to a very robust multi-mode compound cavity laser design that is fully defined by the geometry and the refractive index profile of the MMI region, which is quite insensitive to slight macro-scale refractive index variations due to manufacturing variation or temperature. As the self-imaging position shifts linearly in the refractive index, the confocal beam parameter can be made relatively long.
1. A high power laser comprising:
a planar multi-mode optical gain region on a semiconductor chip extending between a first low-reflectivity facet and a back-reflecting facet;
a means for electrically pumping the multi-mode optical gain region to provide optical gain;
a planar passive multi-mode interference region on an optical chip extending between a second low-reflectivity facet and an output end which is coupled to a single-mode waveguide for providing an output for the laser; and
an optical reflector optically coupled with the single-mode waveguide, whereby a laser cavity is defined by the optical reflector and the back-reflecting facet;
wherein the first and second low-reflectivity facets are optically coupled to form a compound multimode interference region between the back-reflecting facet and the output end of the planar passive multi-mode interference region with a length that is a multiple of a self-imaging distance.
2. The high power laser in claim 1 , wherein the passive multi-mode interference region has a taper with a narrower end adjoining the single-mode waveguide.
3. The high power laser in claim 1 , wherein the passive multi-mode interference region has a rectangular shape.
4. The high power laser in claim 1 , wherein the transition between the passive multi-mode interference region and the single-mode waveguide is abrupt.
5. The high power laser in claim 1 , further comprising additional planar multi-mode optical gain regions on the semiconductor chip, and additional planar passive multi-mode interference regions on the optical chip.
6. The high power laser in claim 5 , wherein the planar multi-mode optical gain regions are spaced apart with a non-uniform spacing in order to provide a predetermined temperature gradient across the semiconductor chip.
7. The high power laser in claim 6 , wherein the predetermined temperature gradient is constant.
8. The high power laser in claim 6 , wherein the predetermined temperature gradient is zero.
9. The high power laser in claim 1 , wherein the optical chip comprises one of silica on a silica substrate, silica on a silicon substrate, and silicon on a silicon substrate.
10. The high power laser in claim 1 , wherein the semiconductor chip comprises one or more of gallium arsenide, indium phosphide, indium gallium arsenide phosphide, gallium aluminum arsenide, and gallium indium phosphide.
11. The high power laser in claim 1 , wherein the first low-reflectivity facet at the front end of the multi-mode optical gain region is located approximately at an n-fold image plane.
12. The high power laser in claim 11 , wherein the n-fold image plane is a 7-fold image plane.
13. The high power laser in claim 11 , wherein the n-fold image plane is a 9-fold image plane.
14. The high power laser in claim 5 , wherein one or more of the single-mode waveguides is optically coupled to an array waveguide grating.
15. The high power lasers in claim 5 , wherein one or more of the single-mode waveguides is optically coupled to a star coupler.
16. The high power laser in claim 1 , wherein the single-mode waveguide is flared with increasing width toward the passive multi-mode interference region.
17. The high power laser in claim 1 , wherein the first and second low-reflectivity facets have a reflectivity between about 0.1% and 20%.