Integrated circuit comprising a gradually doped bipolar transistor
View Patent ↗An integrated circuit includes a bipolar transistor comprising a substrate and a collector formed in the substrate. The collector includes a highly doped lateral zone, a very lightly doped central zone and a lightly doped intermediate zone located between the central zone and the lateral zone 4 a of the collector. The substrate includes a lightly doped lateral zone and a highly doped central zone. The dopant species in the zone of the substrate are electrically inactive.
1. An integrated circuit comprising:
a substrate;
a bipolar transistor comprising a collector in said substrate, said collector comprising a highly doped lateral zone, a very lightly doped central zone and a lightly doped intermediate zone between said central zone and said lateral zone; and
said substrate comprising a lower layer underlying said collector and comprising a lightly doped lateral zone and a highly doped central zone, with dopant species in said central zone being electrically inactive.
2. An integrated circuit according to claim 1 , wherein said intermediate zone has a concentration of dopant species within a range of about 10 16 atoms/cm 3 to 10 19 atoms/cm 3 .
3. An integrated circuit according to claim 1 , wherein said central zone in said collector has a concentration of dopant species within a range of about 10 15 atoms/cm 3 to 10 17 atoms/cm 3 , and said lateral zone in said collector has a concentration of dopant species within a range of about 10 20 to 10 21 atoms/cm 3 .
4. An integrated circuit according to claim 1 , wherein said substrate comprises a silicon-on-insulator (SOI) substrate.
5. An integrated circuit according to claim 1 , wherein said collector is self-aligned with a base and emitter window.
6. An integrated circuit comprising:
a substrate comprising a lower layer and an upper layer thereon;
a bipolar transistor comprising a collector in said upper layer of said substrate, said collector comprising a lateral zone with a first dopant concentration, a central zone with a second dopant concentration and an intermediate zone with a third dopant concentration between said central zone and said lateral zone; and
said lower layer of said substrate comprising a lateral zone with a fourth dopant concentration and a central zone with a fifth dopant concentration, with dopant species in said central zone being electrically inactive.
7. An integrated circuit according to claim 6 , wherein the third dopant concentration in said intermediate zone has a concentration of dopant species within a range of about 10 16 atoms/cm 3 to 10 19 atoms/cm 3 .
8. An integrated circuit according to claim 6 , wherein the fifth dopant concentration in said central zone has a concentration of dopant species within a range of about 10 15 atoms/cm 3 to 10 17 atoms/cm 3 , and the fourth dopant concentration in said lateral zone has a concentration of dopant species within a range of about 10 20 to 10 21 atoms/cm 3 .
9. An integrated circuit according to claim 6 , wherein said substrate comprises a silicon-on-insulator (SOI) substrate, with said lower layer of said substrate forming the insulator portion thereof.
10. An integrated circuit according to claim 6 , wherein said collector is self-aligned with a base and emitter window.
11. An integrated circuit comprising:
a silicon-on-insulator substrate comprising an insulator layer and a silicon layer thereon;
a bipolar transistor comprising a collector in said silicon layer and comprising a lateral zone with a first dopant concentration, a central zone with a second dopant concentration and an intermediate zone with a third dopant concentration between said central zone and said lateral zone; and
said insulator layer comprising a lateral zone with a fourth dopant concentration underlying said lateral and intermediate zone in said silicon layer, and a central zone with a fifth dopant concentration underlying said central zone in said silicon layer, with dopant species in said central zone of said insulator layer being electrically inactive.
12. An integrated circuit according to claim 11 , wherein the third dopant concentration in said intermediate zone has a concentration of dopant species within a range of about 10 16 atoms/cm 3 to 10 19 atoms/cm 3 .
13. An integrated circuit according to claim 11 , wherein the fifth dopant concentration in said central zone has a concentration of dopant species within a range of about 10 15 atoms/cm 3 to 10 17 atoms/cm 3 , and the fourth dopant concentration in said lateral zone has a concentration of dopant species within a range of about 10 20 to 10 21 atoms/cm 3 .
14. An integrated circuit according to claim 11 , wherein said collector is self-aligned with a base and emitter window.
15. An integrated circuit according to claim 11 , wherein said intermediate zone has a concentration of dopant species within a range of about 10 16 atoms/cm 3 to 10 19 atoms/cm 3 .
16. An integrated circuit according to claim 11 , wherein said central zone has a concentration of dopant species within a range of about 10 15 atoms/cm 3 to 10 17 atoms/cm 3 , and said lateral zone has a concentration of dopant species within a range of about 10 20 to 10 21 atoms/cm 3 .
17. The integrated circuit according to claim 1 , wherein said lightly doped lateral zone is positioned beneath said highly doped lateral zone.
18. The integrated circuit according to claim 6 , wherein said lateral zone with a fourth dopant concentration is positioned beneath said lateral zone with a first dopant concentration.
19. The integrated circuit according to claim 1 , wherein said highly doped central zone is positioned beneath said very lightly doped central zone.
20. The integrated circuit according to claim 6 , wherein said central zone with a fifth dopant concentration is positioned beneath said central zone with a second dopant concentration.