Method for selective CMP of polysilicon
View Patent ↗A method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and/or a polysilicon to silicon nitride. The method is particularly suitable for use in the fabrication of MEMS devices.
1. A method for selectively removing polysilicon from a surface in preference to silicon dioxide and/or silicon nitride, the method comprising:
a) providing a polishing slurry having a pH of from about 8 to about 11 that comprises colloidal silica abrasive particles dispersed in water and an additive compound selected from the group consisting of lysine, lysine monohydrochloride and arginine;
b) disposing the polishing slurry between a polishing pad and the surface; and
c) pressing the polishing pad and the surface into contact with each other while the polishing pad and surface are moving relative to each other with the polishing slurry disposed therebetween to remove polysilicon from the surface at a removal rate of 100 nm/min or greater while maintaining a selectivity ratio of polysilicon to silicon dioxide and/or of polysilicon to silicon nitride of 30 or greater.
2. The method according to claim 1 wherein said removal rate is 200 nm/min or greater.
3. The method according to claim 1 wherein said selectivity ratio is 50 or greater.
4. The method according to claim 1 wherein the polishing slurry comprises from about 5% to about 15% by weight of said colloidal silica abrasive particles, and wherein said colloidal silica abrasive particles have a mean average diameter of from about 25 nm to about 75 nm.
5. The method according to claim 1 wherein the polishing slurry comprises from about 1.0% to about 4.0% by weight of arginine.
6. The method according to claim 1 wherein the polishing slurry comprises from about 1.0% to about 2.0% by weight of lysine.
7. The method according to claim 1 wherein the polishing slurry further comprises picolinic acid or a derivative thereof.
8. The method according to claim 1 wherein the polishing slurry comprises about 10% by weight of colloidal silica abrasive particles having a mean average diameter of about 50 nm and from about 1% to about 3% by weight of arginine.
9. A method for selectively removing polysilicon from a surface in preference to silicon dioxide and/or silicon nitride, the method comprising:
a) providing a polishing slurry having a pH of from about 8 to about 11 that comprises
i) from about 5% to about 15% by weight of colloidal silica abrasive particles having a mean average diameter of from about 25 nm to about 75 nm dispersed in water,
ii) from about 1% to about 3% by weight of arginine, and
iii) about 1% by weight of picolinic acid;
b) disposing the polishing slurry between a polishing pad and the surface; and
c) pressing the polishing pad and the surface into contact with each other while the polishing pad and surface are moving relative to each other with the polishing slurry disposed therebetween to remove polysilicon from the surface at a removal rate of 100 nm/min or greater while maintaining a selectivity ratio of polysilicon to silicon dioxide and/or of polysilicon to silicon nitride of 30 or greater.
10. A method for selectively removing polysilicon from a surface in preference to silicon dioxide and/or silicon nitride, the method comprising:
a) providing a polishing slurry having a pH of from about 8 to about 11 that comprises calcined ceria abrasive particles dispersed in water and an additive compound, wherein said additive compound is selected from the group consisting of lysine, lysine monohydrochloride and arginine;
b) disposing the polishing slurry between a polishing pad and the surface; and
c) pressing the polishing pad and the surface into contact with each other while the polishing pad and surface are moving relative to each other with the polishing slurry disposed therebetween to remove polysilicon from the surface at a removal rate of 100 nm/min or greater while maintaining a selectivity ratio of polysilicon to silicon dioxide and/or of polysilicon to silicon nitride of 30 or greater.
11. The method according to claim 10 wherein said removal rate is 200 nm/min or greater.
12. The method according to claim 10 wherein said selectivity ratio is 50 or greater.
13. The method according to claim 10 wherein said additive compound is lysine or lysine monohydrochloride.
14. The method according to claim 10 wherein the polishing slurry comprises from about 0.5% to about 1.5% by weight of said calcined ceria abrasive particles, and wherein said calcined ceria abrasive particles have a mean average diameter of from about 170 nm to about 250 nm.
15. The method according to claim 10 wherein the polishing slurry comprises from about 1.0% to about 2.0% by weight of lysine monohydrochloride.
16. The method according to claim 10 wherein the polishing slurry comprises about 1% by weight of calcined ceria abrasive particles having a mean average diameter of about 200 nm and from about 1% to about 2% by weight of lysine monohydrochloride.