Solar cell having silicon nano-particle emitter
View Patent ↗A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.
1. A silicon solar cell comprising:
a) a silicon substrate having first and second opposing major surfaces,
b) a surface passivation layer on the first surface, wherein the first major surface is the light incident side,
c) a silicon tunnel oxide layer on the second surface,
d) a first plurality of doped silicon nano-particle emitters and a second plurality of doped silicon nano particle emitters on the silicon oxide layer, the first plurality and the second plurality having p-type and n-type doping, respectively, and the p-type emitters alternating with the n-type emitters on the second surface, and
e) a first interconnect line to the first plurality of emitters and a second interconnect line to the second plurality of emitters.
2. The silicon solar cell of claim 1 wherein the substrate is polycrystalline silicon.
3. The silicon solar cell of claim 1 wherein the substrate is single crystalline silicon.
4. The silicon solar cell of claim 3 wherein the substrate is undoped.
5. The silicon solar cell of claim 3 wherein the substrate is lightly doped.
6. The silicon solar cell of claim 5 wherein the nano-particles of the emitters have a diameter of less than 20 nanometers.
7. A method of fabricating a silicon solar cell having nano-particle silicon emitters comprising the steps of:
a) providing a silicon substrate having first and second opposing major surfaces, wherein the first major surface is the light incident side,
b) forming a surface passivation layer on the first surface,
c) forming a silicon tunnel oxide layer on the second surface,
d) forming a first plurality of p-doped nano-particle silicon emitters over the silicon tunnel oxide layer and a second plurality of n-doped nano-particle silicon emitters over the silicon tunnel oxide layer, the first plurality of emitters alternating with the second plurality of emitters on the second surface,
e) forming first and second interconnect lines to the first plurality of emitters and to the second plurality of emitters, respectively.
8. The method of claim 7 wherein step d) includes forming a surfactant layer on the silicon oxide layer to prevent clustering of the nano-particles.
9. The method of claim 8 wherein step d) includes depositing a layer of undoped nano-particle silicon over the silicon oxide layer and then selectively doping the layer of undoped nano-particle silicon to form the first plurality of p-doped emitters and the second plurality of n-doped emitters.
10. The method of claim 8 wherein the surfactant is in solution with the nano-particles prior to forming the emitters.
11. The method of claim 10 wherein the nano-particles in solution are doped prior to forming the emitters.
12. The method of claim 11 wherein step d) includes inkjet printing of the emitters.
13. The method of claim 11 wherein step d) includes screen processing.
14. The method of claim 7 wherein step d) includes depositing a layer of undoped nano-particle silicon over the silicon oxide layer and then selectively doping the layer of undoped nano-particle silicon to form the first plurality of p-doped emitters and the second plurality of n-doped emitters.