IP Library Granted Patent US 7,581,295
Granted Patent B2
US 7,581,295 · App. 11/564,146 · Granted Sep 1, 2009

Piezoelectric element and method of manufacturing the same

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Quick Facts
Patent No.
US 7,581,295
App. No.
11/564,146
Granted
Sep 1, 2009
Kind
B2
Abstract

An array of piezoelectric elements is easily manufactured by making insulating portions at side surfaces smaller. The piezoelectric element includes: a multilayered structure in which piezoelectric material layers and internal electrode layers are alternately stacked; first insulating films formed by using an AD method, for covering a first group of internal electrode layers at a first surface of the multilayered structure; second insulating films formed by using the AD method, for covering a second group of internal electrode layers at a second surface of the multilayered structure; a first external electrode connected to the second group of internal electrode layers and insulated from the first group of internal electrode layers at the first surface; and a second external electrode connected to the first group of internal electrode layers and insulated from the second group of internal electrode layers at the second surface.

Claims (14)

1. A method of manufacturing a piezoelectric element having a multilayered structure, said method comprising the steps of:

(a) fabricating a multilayered structure in which a plurality of piezoelectric material layers and a plurality of internal electrode layers are alternately stacked, said plurality of internal electrode layers including a first group of internal electrode layers and a second group of internal electrode layers;

(b) forming a mask on at least regions of a first surface of said multilayered structure except for end portions of said first group of internal electrode layers;

(c) forming first insulating films for covering the end portions of said first group of internal electrode layers at the first surface of said multilayered structure, on which the mask has been formed at step (b), by using an aerosol deposition method;

(d) removing the mask formed at step (b);

(e) forming a mask on at least regions of a second surface opposite to the first surface of said multilayered structure except for end portions of said second group of internal electrode layers;

(f) forming second insulating films for covering the end portions of said second group of internal electrode layers at the second surface of said multilayered structure, on which the mask has been formed at step (e), by using the aerosol deposition method;

(g) removing the mask formed at step (e);

(h) forming, after step (d), a first external electrode electrically connected to said second group of internal electrode layers and insulated from said first group of internal electrode layers by said first insulating films at the first surface of said multilayered structure; and

(i) forming, after step (g), a second external electrode electrically connected to said first group of internal electrode layers and insulated from said second group of internal electrode layers by said second insulating films at the second surface of said multilayered structure.

2. The method of manufacturing a piezoelectric element according to claim 1 , wherein said first group of internal electrode layers and said second group of internal electrode layers are alternately disposed.

3. The method of manufacturing a piezoelectric element according to claim 1 , wherein step (a) includes stacking plural sheets, each including a sheet of a piezoelectric material mixed with a binder and a solvent and at least an electrode material formed thereon, and baking the stacked plural sheets.

4. The method of manufacturing a piezoelectric element according to claim 1 , wherein step (a) includes forming said plurality of piezoelectric material layers by using the aerosol deposition method.

5. The method of manufacturing a piezoelectric element according to claim 1 , wherein the mask formed at least one of step (b) and (e) includes one of a resist mask and a metal mask.