Method of forming a metal line and method of manufacturing display substrate having the same
View Patent ↗A method of forming a metal line is provided. A first metal layer and a second metal layer protecting the first metal layer are formed on a base substrate. The first metal layer includes aluminum or aluminum alloy. A photoresist pattern having a linear shape is formed on the second metal layer. The first and second metal layers are dry-etched using etching gas and the photoresist pattern as an etching mask. An etching material is removed from the base substrate, to prevent corrosion of the dry-etched first metal layer. Therefore, the source metal pattern without corrosion may be formed through a dry-etching process so that a manufacturing cost is decreased.
1. A method of manufacturing a display substrate, the method comprising:
forming a gate insulating layer and a channel layer on a base substrate including a gate metal pattern, in sequence, the gate metal pattern including a gate line and a gate electrode of a switching element;
forming a source metal layer on the channel layer, the source metal layer including a first metal layer including aluminum or aluminum alloy and a second metal layer protecting the first metal layer;
dry-etching the source metal layer having the first and second metal layers to form a dry-etched source metal pattern, the source metal pattern including a source line, a source electrode and a drain electrode of the switching element;
removing an etching material from an exposed surface of dry-etched first metal layer;
forming a passivation layer on the base substrate having the source metal pattern from which the etching material is removed, the passivation layer having a contact hole through which the drain electrode is partially exposed; and
forming a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode through the contact hole.
2. The method of claim 1 , wherein forming the source metal layer includes:
forming an auxiliary metal layer between the base substrate and the first metal layer to protect the first metal layer; and
forming the second metal layer on the first metal layer.
3. The method of claim 1 , wherein the second metal layer comprises molybdenum or molybdenum alloy.
4. The method of claim 1 , further comprising etching the channel layer using the source metal pattern as an etching mask.
5. The method of claim 1 , wherein forming the source metal pattern includes:
partially etching the source metal layer using a photoresist pattern having a groove pattern to form the source line and an electrode pattern;
partially etching the photoresist pattern to decrease a thickness of the photoresist pattern so that the electrode pattern corresponding to the groove pattern is partially exposed to form an exposed portion of the electrode pattern; and
dry-etching the exposed portion of the electrode pattern using etching gas to form the source electrode and the drain electrode.
6. The method of claim 5 , further comprising etching the source metal layer using the photoresist pattern as an etching mask.
7. The method of claim 5 , wherein dry-etching the exposed portion of the electrode pattern using etching gas includes using etching gas comprising chlorine-containing gas.
8. The method of claim 7 , wherein dry-etching the exposed portion of the electrode pattern using etching gas includes using etching gas further comprising nitrogen gas.
9. The method of claim 1 , wherein removing an etching material from an exposed surface of the dry-etched first metal layer includes removing chlorine ions.
10. The method of claim 9 , wherein removing the etching material includes:
supplying the dry-etched source metal pattern with fluorine-containing gas; and
plasma discharging the fluorine-containing gas to form a corrosion preventing layer on an exposed surface of the first metal layer.
11. The method of claim 9 , wherein removing the etching material includes:
supplying the dry-etched source metal pattern with at least one gas selected from the group consisting of water vapor and hydrogen gas; and
plasma discharging the at least one gas to remove the chlorine ions.
12. The method of claim 11 , wherein plasma discharging the at least one gas includes plasma discharging by a radio frequency voltage.
13. The method of claim 1 , wherein the channel layer comprises an active layer and an ohmic contact layer on the active layer.
14. The method of claim 13 , further comprising partially etching the ohmic contact layer using the source electrode and the drain electrode as an etching mask so that the active layer is partially exposed.
15. A method of manufacturing a display substrate, the method comprising:
forming a channel layer on a base substrate;
forming a source metal layer on the channel layer on the base substrate, the source metal layer including a first metal layer and a second metal layer protecting the first metal layer;
dry-etching the source metal layer and the channel layer using a mask to form a source metal pattern, the source metal pattern including a source line, a source electrode and a drain electrode of a switching element; and
removing an etching material from an exposed surface of the dry-etched first metal layer.
16. The method of claim 15 , wherein the first metal layer comprises aluminum and/or aluminum alloy.
17. The method of claim 15 , wherein the channel layer and the source line have substantially the same shape when viewed in a plan view.
18. The method of claim 15 , wherein forming the source metal layer includes:
forming an auxiliary metal layer between the base substrate and the first metal layer to protect the first metal layer; and
forming the second metal layer on the first metal layer.
19. The method of claim 15 , wherein the second metal layer comprises molybdenum or molybdenum alloy.
20. The method of claim 15 , further comprising etching the channel layer using the source metal pattern as an etching mask.
21. The method of claim 15 , wherein forming the source metal pattern includes:
partially etching the source metal layer using a photoresist pattern having a groove
pattern to form the source line and an electrode pattern;
partially etching the photoresist pattern to decrease a thickness of the photoresist pattern so that the electrode pattern corresponding to the groove pattern is partially exposed to form an exposed portion of the electrode pattern; and
dry-etching the exposed portion of the electrode pattern using etching gas to form the source electrode and the drain electrode.
22. The method of claim 21 , further comprising etching the source metal layer using the photoresist pattern as an etching mask.
23. The method of claim 21 , wherein dry-etching the exposed portion of the electrode pattern using an etching gas includes using an etching gas comprising chlorine gas.
24. The method of claim 23 , wherein dry-etching the exposed portion of the electrode pattern using an etching gas includes using an etching gas further comprising nitrogen gas.
25. The method of claim 15 , wherein removing an etching material from an exposed surface of the dry-etched first metal layer includes removing chlorine ions.
26. The method of claim 25 , wherein removing the etching material includes:
supplying the dry-etched source metal pattern with a fluorine-containing gas; and
plasma discharging the fluorine-containing gas to form a corrosion preventing layer on an exposed surface of the first metal layer.
27. The method of claim 25 , wherein removing the etching material includes:
supplying the dry-etched source metal pattern with at least one gas selected from the group consisting of water vapor and hydrogen gas; and
plasma discharging the gas to remove the chlorine ions.
28. The method of claim 27 , wherein plasma discharging the gas includes plasma discharging by a radio frequency voltage.
29. The method of claim 15 , wherein the channel layer comprises an active layer and an ohmic contact layer on the active layer.
30. The method of claim 29 , further comprising partially etching the ohmic contact layer using the source electrode and the drain electrode as an etching mask so that the active layer is partially exposed.