IP Library › Patent Application 11565753
Patent Application
App. No. 11/565,753

BORON DOPED DIAMOND

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Quick Facts
Patent No.
US None
App. No.
11/565,753
Abstract

A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 μm, or has a volume exceeding 1 mm 3 , or a combination of such characteristics.

Claims (1)

1 . A method of producing a layer of single crystal boron doped diamond including the steps of providing a diamond substrate having a surface which is substantially free of crystal defects, providing a source gas, such source gas including a source of boron, dissociating the source gas and allowing homoepitaxial diamond growth on the surface which is substantially free of crystal defects.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 10, 2012
From: SCARSBROOK, GEOFFREY ALAN; MARTINEAU, PHILIP MAURICE; TWITCHEN, DANIEL JAMES; WHITEHEAD, ANDREW JOHN; COOPER, MICHAEL ANDREW; DORN, BARBEL SUSAN CHARLOTTE
To: ELEMENT SIX LIMITED
Reel/Frame 028189/0042 →