Semiconductor chip with bond area
A semiconductor chip comprises a metal pad exposed by an opening in a passivation layer, wherein the metal pad has a testing area and a bond area. During a step of testing, a testing probe contacts with the testing area for electrical testing. After the step of testing, a polymer layer is formed on the testing area with a probe mark created by the testing probe. Alternatively, a semiconductor chip comprises a testing pad and a bond pad respectively exposed by two openings in a passivation layer, wherein the testing pad is connected to the bond pad. During a step of testing, a testing probe contacts with the testing pad for electrical testing. After the step of testing, a polymer layer is formed on the testing pad with a probe mark created by the testing probe.
1. A semiconductor chip comprising:
a semiconductor substrate;
a first metal layer over said semiconductor substrate, wherein said first metal layer has a top surface with a contact area and a probe mark;
a polymer layer directly on said probe mark and over said semiconductor substrate, wherein an opening in said polymer layer is over said contact area; and
a second metal layer directly on said contact area and over said semiconductor substrate.
2. The semiconductor chip of claim 1 further comprising at least one metal oxide semiconductor (MOS) device in or on said semiconductor substrate, wherein said semiconductor substrate comprises a silicon substrate.
3. The semiconductor chip of claim 1 , wherein said polymer layer comprises polyimide.
4. The semiconductor chip of claim 1 , wherein said polymer layer has a thickness between 5 and 20 micrometers.
5. The semiconductor chip of claim 1 further comprising a gold layer having a thickness between 10 and 30 micrometers over said second metal layer.
6. The semiconductor chip of claim 1 further comprising a gold layer having a thickness between 1 and 10 micrometers over said second metal layer.
7. The semiconductor chip of claim 1 further comprising a copper layer having a thickness between 2 and 30 micrometers over said second metal layer.
8. The semiconductor chip of claim 1 further comprising a copper layer over said second metal layer and a nickel layer on said copper layer.
9. The semiconductor chip of claim 1 further comprising a tin-containing layer having a thickness between 3 and 150 micrometers over said second metal layer.
10. The semiconductor chip of claim 9 further comprising a nickel layer having a thickness between 0.5 and 5 micrometers between said tin-containing layer and said second metal layer, and a copper layer having a thickness between 1 and 10 micrometers between said nickel layer and said second metal layer.
11. The semiconductor chip of claim 1 further comprising a passivation layer over said semiconductor substrate, wherein an opening in said passivation layer is over said probe mark and said contact area, wherein said polymer layer is further on said passivation layer, wherein said passivation layer comprises a nitride layer having a thickness between 0.2 and 1.2 micrometers.
12. The semiconductor chip of claim 11 , wherein said opening in said passivation layer has a length between 80 and 200 micrometers and a width between 40 and 110 micrometers.
13. The semiconductor chip of claim 1 wherein said second metal layer comprises a titanium-containing layer directly on said contact area and over said semiconductor substrate.
14. The semiconductor chip of claim 1 , wherein said second metal layer is further on a top surface of said polymer layer.
15. A semiconductor chip comprising:
a semiconductor substrate;
a testing pad over said semiconductor substrate, wherein said testing pad has a probe mark;
a contact pad over said semiconductor substrate, wherein said contact pad is connected to said testing pad;
a separating layer over said semiconductor substrate, wherein a first opening in said separating layer is over said probe mark, and wherein a second opening in said separating layer is over said contact pad, wherein said separating layer comprises a nitride layer;
a polymer layer directly on said probe mark and said separating layer, wherein a third opening in said polymer layer is over said contact pad; and
a metal layer on said contact pad and on said polymer layer.
16. The semiconductor chip of claim 15 , wherein a distance between center points of said testing pad and said contact pad is between 40 and 300 micrometers.
17. The semiconductor chip of claim 15 , wherein said nitride layer has a thickness between 0.2 and 1.2 micrometers.
18. The semiconductor chip of claim 15 further comprising a tin-containing layer having a thickness between 3 and 150 micrometers over said metal layer.
19. The semiconductor chip of claim 18 further comprising a nickel layer having a thickness between 0.5 and 5 micrometers between said tin-containing layer and said metal layer, and a copper layer having a thickness between 1 and 10 micrometers between said nickel layer and said metal layer.
20. The semiconductor chip of claim 15 , wherein said metal layer comprises a titanium-containing layer on said contact pad and on said polymer layer.