IP Library Granted Patent US 7,767,741
Granted Patent B2
US 7,767,741 · App. 11/572,475 · Granted Aug 3, 2010

Semiconductive polymer compositions

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Quick Facts
Patent No.
US 7,767,741
App. No.
11/572,475
Granted
Aug 3, 2010
Kind
B2
Abstract

The present invention relates to a semiconductive polymer composition comprising an olefin homo- or copolymer wherein the composition has a direct current volume resistivity of less than 1000 Ohm·cm at 90° C., an elongation at break which after aging for 240 hours at 135° C. does not change by more than 25%, and a total number of structures of 20 or less in the SIED test. Furthermore, the present invention relates to an electric power cable comprising a conductor, a semiconducting layer and, adjacent to the semiconducting layer, an insulation layer, wherein the semiconducting layer is formed by said semiconductive polymer composition and to the use of said semiconducting polymer composition for the production of a semiconductive layer of an electric power cable.

Claims (21)

1. A semiconductive polymer composition comprising an olefin homo- or copolymer wherein the composition has a direct current volume resistivity of less than 1000 Ohm·cm at 90° C., an elongation at break which after aging for 240 hours at 135° C. does not change by more than 25%, and a total number of structures of 20 or less in the SIED test.

2. Semiconductive polymer composition according to claim 1 comprising carbon black with an L c of 1.8 to 2.4 nm.

3. Semiconductive polymer composition according to claim 2 , wherein the carbon black has a surface area expressed as iodine number of 75 mg/g or higher.

4. Semiconductive polymer composition according to claim 1 comprising an antioxidant selected from the group of diphenyl amines and diphenyl sulfides.

5. Semiconducting polymer composition according to claim 1 , wherein the composition further comprises a compound with polypropylene oxy groups.

6. Semiconducting polymer composition according to claim 4 , which comprises furnace carbon black.

7. Semiconductive polymer composition according to claim 1 which comprises carbon black in an amount of 10 to 40 wt. %.

8. Semiconductive polymer composition according to claim 3 which comprises carbon black with surface area expressed as iodine number of 200 mg/g or higher.

9. Semiconductive polymer composition according to claim 8 which comprises carbon black with surface area expressed as iodine number of 300 mg/g or higher.

10. Semiconducting polymer composition according to claim 1 , wherein the composition comprises an ethylene homo- or copolymer.

11. Semiconducting polymer composition according to claim 1 , wherein the polyolefin comprises monomer units with polar groups or wherein the composition further comprises a polymer with monomer units with polar groups.

12. Semiconducting polymer composition according to claim 11 , wherein the polymer with polar monomer units comprises a copolymer of an olefin, with one or more polar comonomers selected from the group of alkyl acrylates, alkyl methacrylates, acrylic acids, methacrylic acids and vinyl acetates.

13. Semiconducting polymer composition according to claim 11 , wherein the amount of monomer units with polar groups is from 1 to 15 mol % with regard to the total amount of monomers in the polymeric part of the composition.

14. Semiconducting polymer composition according to claim 10 , wherein the polyethylene has a density below 935 kg/m 3 .

15. Semiconducting polymer composition according to claim 1 , wherein the composition has an MFR 21 of more than 25 g/10 min.

16. Semiconducting polymer composition according to claim 1 , with an electrical breakdown strength as measured in the model cable test of at least 29 kV/mm.

17. Semiconducting polymer composition according to claim 1 , wherein the composition is crosslinkable.

18. Semiconducting polymer composition according to claim 17 , which comprises a peroxide as a crosslinking agent.

19. An electric power cable comprising a conductor, a semiconducting layer and, adjacent to the semiconducting layer, an insulation layer, wherein the semiconducting layer is formed by a composition according to claim 1 .

20. Semiconductive polymer composition according to claim 1 which comprises carbon black in an amount of 10 to 30 wt. %.

21. Semiconducting polymer composition according to claim 11 , wherein the polymer with polar monomer units comprises a copolymer of an ethylene, with one or more polar comonomers selected from the group of alkyl acrylates, alkyl methacrylates, acrylic acids, methacrylic acids and vinyl acetates.

Assignments (2)
CHANGE OF ADDRESS Recorded Feb 23, 2022
From: BOREALIS AG
To: BOREALIS AG
Reel/Frame 059219/0949 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2007
From: NYLANDER, PERRY; CAMPUS, ALFRED; SMEDBERG, ANNIKA; JAEGER, KARL-MICHAEL; NILLSON, ULF; EKLIND, HANS; BROMAN, CLAES; KALKNER, WILFRIED; BRUEGGEMANN, MARC
To: BOREALIS TECHNOLOGY OY
Reel/Frame 019832/0712 →