Light emitting device with improved conversion layer

1. A light emitting device comprising:

a substrate layer of Al 2 O 3 ; and

a first light conversion layer located on said substrate layer and having a doping material,

said substrate layer being of a different material as compared to said first light conversion layer:

wherein said first light conversion layer is doped at doping levels of ≦3 mol-% and ≧0.05 mol-%:

and wherein said first light conversion layer has a thickness of ≧10 nm and ≦30 nm;

wherein said first light conversion layer and said substrate layer have collateral edges which are matched;

wherein the first light conversion layer comprises a polycrystalline ceramic layer of YAG doped with Ce,

wherein a refractive index n 2 of said first light conversion layer is equal or larger than a refractive index n 1 of said substrate layer and wherein n 2 −n 1 ≧0 and n 2 −n 1 ≦1

wherein the light conversion layer is positioned on the substrate layer by sintering,

and wherein a color temperature of the LED is adjustable by abrasion of the light conversion layer.

2. The light emitting device according to claim 1 , further comprising a second light conversion layer affixed to said first light conversion layer, said second light conversion layer selected out of the group of AES:Eu wherein AE is selected from the group Sr, Ca, Mg, Ba and mixtures thereof, AE 2 Si 5−x Al x N 8−x O x :Eu wherein AE is selected from the group of Sr, Ba, Ca and mixtures thereof, and mixtures thereof.

3. The light emitting device according to claim 1 , wherein the first light conversion layer has a thermal stability of ≦1000° C. and ≧200° C. for a continuous heating time of ≧1 h and ≦100 h.

4. The light emitting device according to claim 1 , wherein the light conversion layer is essentially free of organic material and/or silicon material.

5. The light emitting device according to claim 2 , wherein said second light conversion layer emits light in a wavelength different from the first light conversion layer.

6. The light emitting device according to claim 1 , wherein the substrate layer is made of a material chosen from a group comprising sapphire (Al 2 O 3 ), zinc oxide (ZnO), Mg 1−x Zn x Al 2 O 4 with x being 0≧x≦1 and mixtures thereof; and/or the light conversion layer is made of a material chosen from a group comprising garnet type materials A 3 B 5 O 12 , where A=Y, Lu, Gd, La, Tb, Ba, Sr, Ca or mixtures thereof, and B =Al, Ga, Si, Sc, Mg or mixtures thereof; wherein the light conversion layer comprises a doping material facilitating light absorption and emission processes, the doping material being chosen from a group comprising Cerium, Pr, Eu, Sm, Nd, Tb, Ho, Er, Tm, Yb, Dy and mixtures thereof.

7. The light emitting device according to claim 1 , wherein a thickness of the first light conversion layer is ≧20/[D % ] nm and ≦60/[D % ] nm, where D % is a molar ratio of the doping material.