Light emitting device with resin layer containing blue, green and red emitting phosphors which emits white light when excited by ultraviolet light

1. A light emitting device, comprising:

a light source comprising a light emitting semiconductor element which emits ultraviolet light; and

a light emitting part comprising a resin layer comprising a plurality of phosphors comprising blue emitting, green emitting, and red emitting phosphors, said phosphors being dispersed in the resin layer and emitting white light when excited by ultraviolet light emitted from the light source,

wherein each combination of any two of said blue-emitting, green emitting, and red emitting phosphors satisfies a condition represented by an expression:

−0.2<{( D 1) 2 ×w 1}−{( D 2) 2 ×w 2}<0.2,

where D1 (μm) and w1 (g/mm 3 ) are an average particle size and a density, respectively, of one phosphor among the plurality of phosphors, and D2 (μm) and w2 (g/mm 3 ) are an average particle size and a density, respectively, of another phosphor, and

wherein the plurality of phosphors are preliminarily bound and integrated by an inorganic binder to form integrated particles before being dispersed in the resin layer, and are present in the resin layer as said integrated particles, and

wherein a maximum value (Δx, Δy) of color difference (absolute value) between emission chromaticity (x, y) and emission chromaticity (x1, y1) satisfies conditions of Δx<0.05 and Δy<0.05, where (x, y) is emission chromaticity measured directly above the light source and (x1, y1) is emission chromaticity measured for each of front lights and side leakage lights in all directions from the light emitting device.

2. The light emitting device as set forth in claim 1 , wherein an average particle size of the plurality of phosphors as a mixture is 7 μm or more.

3. The light emitting device as set forth in claim 1 , wherein the light emitting semiconductor element is a light emitting diode or a laser diode.

4. The light emitting device as set forth in claim 1 , wherein the light emitting semiconductor element is a light emitting diode having an emission wavelength in a range from 360 to 420 nm.

5. The light emitting device as set forth in claim 1 , wherein the light emitting device has a temperature characteristic that color difference (Δx, Δy (absolute value)) between emission chromaticity at 25° C. and emission chromaticity at 85° C. falls within a range of Δx<0.005 and Δy<0.01.

6. A backlight comprising the light emitting device as set forth in claim 1 .

7. A liquid crystal display, comprising:

a backlight including the light emitting device as set forth in claim 1 ; and

a transmissive or transreflective liquid crystal display part disposed on a light emitting face side of the backlight.

8. The light emitting device as set forth in claim 1 , wherein the integrated particles are uniformly dispersed in the resin layer.

9. The light emitting device as set forth in claim 1 , wherein

a ratio of the inorganic binder to a total amount of the plurality of phosphors in the integrated particles is 0.01 to 0.3 mass %.

10. The light emitting device as set forth in claim 1 , wherein an average particle size of the integrated particles is 8 μm or more.

11. A method of making the light emitting device of claim 1 , comprising covering said light source with said light emitting part.