Textured light emitting diodes

1. A high fill factor textured light emitting diode structure comprising:

a first textured cladding and contact layer comprising a doped III-V or II-VI group compound semiconductor or alloys of such semiconductors deposited by epitaxial lateral overgrowth (ELOG) onto a substrate patterned with a plurality of regions from which said overgrowth is initiated such that said first textured cladding and said contact layer are continuous over said substrate;

a textured undoped or doped active layer comprising a III-V or II-VI group semiconductor or alloys of such semiconductors and where radiative recombination of electrons and holes occurs or intersubband transition occurs, the active layer being continuous over said first textured cladding and contact layer; and

a second textured cladding and contact layer comprising a doped III-V or II-VI group semiconductor or alloys of such semiconductors.

2. A structure according to claim 1 , comprising:

a conducting or insulating substrate;

a III-V or II-VI group compound semiconductor or alloys of such semiconductors deposited onto the substrate by HVPE, MOCVD, MBE, LPE, sublimation, sputtering or other appropriate deposition method; and

a pattern on the substrate produced by a mask or maskless method comprising photolithography, direct writing using an electron beam or a focused ion beam, scanning tunneling microscopy, holography, nanoimprint, anodic porous alumina, wet etching or other patterning method or combined method.

3. A structure according to claim 1 , wherein the or each textured cladding and contact layer is in the form of a single layer, multiple layers or superlattices.

4. A structure according to claim 1 , wherein the textured active layer is in the form of a doped or undoped double heterostructure, a single quantum well or multiple quantum wells.

5. A structure according to claim 1 , wherein the substrate is conducting and comprises GaN, AlN, SiC, Si, GaAs, InP, ZnSe or other metal oxide material.

6. A structure according to claim 1 , wherein the substrate is insulating and comprises sapphire, AlN, GaN, ZnO or other metal oxide material.

7. A high fill factor textured light emitting diode structure comprising:

a textured n-cladding and contact layer comprising an n-type III-V or II-VI group compound semiconductor or alloys of such semiconductors deposited by epitaxial lateral overgrowth (ELOG) onto a substrate patterned with a plurality of regions from which said overgrowth is initiated such that said first textured cladding and said contact layer are continuous over said substrate;

a textured active layer comprising a III-V or II-VI group semiconductor or alloys of such semiconductors and where radiative recombination of electrons and holes occurs, the active layer being continuous over said first textured n-cladding and contact layer; and

a textured hole emitting layer and p-type contact layer comprising a p-type III-V or II-VI group semiconductor or alloys of such semiconductors.

8. A structure according to claim 7 , comprising:

a conducting or insulating substrate;

a III-V or II-VI group compound semiconductor or alloys of such semiconductors deposited onto the substrate by HVPE, MOCVD, MBE, LPE, sublimation, sputtering or other appropriate deposition method; and

a pattern on the substrate produced by a mask or maskless method comprising photolithography, direct writing using an electron beam or a focused ion beam, scanning tunneling microscopy, holography, nanoimprint, anodic porous alumina, wet etching or other patterning method or combined method.

9. A structure according to claim 7 , wherein the textured hole emitting layer and p-type contact layer is in the form of a single layer, multiple layers or superlattices.

10. A structure according to claim 7 , wherein the textured active layer is in the form of a doped or undoped double heterostructure, a single quantum well or multiple quantum wells.

11. A structure according to claim 7 , wherein the textured n-cladding and contact layer is in the form of single layer, multiple layers or superlattices.

12. A structure according to claim 7 , wherein the substrate is conducting and comprises GaN, AlN, SiC, Si, GaAs, InP, ZnSe or other metal oxide material.

13. A structure according to claim 7 , wherein the substrate is insulating and comprises sapphire, AlN, GaN, ZnO or other metal oxide material.