Component that operates using acoustic waves and method for producing said component

1. An acoustic wave component comprising:

a layer system comprising a piezoelectric layer and a first metal layer on the piezoelectric layer;

a first resonator comprising a first electrode in the first metal layer, the first metal layer comprising electrode structures periodically arranged in a direction of propagation of a wave through the acoustic wave component; and

a second resonator coupled to the first resonator and electrically isolated from the first resonator;

wherein the layer system comprises a waveguide for guiding a guided bulk acoustic wave in a lateral direction of the acoustic wave component;

wherein the first and second resonators are coupled via a coupling system that comprises the layer system; and

wherein the first and second resonators are acoustically coupled to one another in a transverse direction via the coupling system.

2. The acoustic wave component of claim 1 , further comprising:

a second metal layer below the piezoelectric layer;

the second metal layer having a conductive surface that is below a first transducer of the first resonator and that serves as second electrode of the first resonator.

3. The acoustic wave component of claim 1 , wherein the coupling system comprises two piezoelectric sub-layers separated by a third metal layer.

4. The acoustic wave component of claim 3 , wherein first and second transducers are parts of the first and second resonators, respectively, and wherein a first conductive surface is between the first and second transducers and is in the second metal layer.

5. An acoustic wave component comprising:

a layer system comprising a piezoelectric layer and a first metal layer on the piezoelectric layer;

a first resonator comprising a first electrode in the first metal layer, the first metal layer comprising electrode structures periodically arranged in a direction of propagation of a wave through the acoustic wave component, the first resonator comprising a second electrode in the first metal layer, electrode structures of the first electrode and the second electrode alternating and forming a first transducer;

a second resonator coupled to the first resonator and electrically isolated from the first resonator;

a first signal path that is between first terminals of a first electrical port and a second electrical port; and

a second signal path that is arranged between second terminals of the first electrical port and the second electrical port;

wherein the first transducer is in the first signal path and a second transducer is in the second signal path; and

wherein the layer system comprises a waveguide for guiding a guided bulk acoustic wave in a lateral direction of the acoustic wave component.

6. A method for manufacturing a component that operates with guided acoustic waves, comprising:

forming, on a first substrate, a layer structure comprised of a continuous metal layer, a piezoelectric layer, and a structured metal layer;

joining the layer structure to a second substrate;

removing the first substrate;

applying, to an exposed surface of the continuous metal layer, an additional layer structure comprising an additional piezoelectric layer and an additional structured metal layer; and

joining the additional layer structure to a third substrate.

7. The method of claim 6 , wherein connection between the layer structure and the second substrate and/or connection between the additional layer structure and the third substrate is via wafer-bonding.

8. The method of claim 6 , wherein at least one substrate of the first, second and third substrates comprises a thick film.

9. The method of claim 6 , further comprising:

producing a planarization layer as a last layer in the layer structure before joining the layer structure to the second substrate and/or in the additional layer structure before joining the additional layer structure to the third substrate.

10. The method of claim 6 , further comprising:

forming a continuous metal layer in which electrode structures are structured by etching, in order to form the structured metal layer or the additional structured metal layer.

11. The method of claim 6 , wherein the structured metal layer and/or the additional structured metal layer is produced using masks.