Nitride semiconductor light emitting device and fabrication method therefor
Disclosed is a nitride semiconductor light emitting device including: one or more AllnN layers; an In-doped nitride semiconductor layer formed above the AllN layers; a first electrode contact layer formed above the In-doped nitride semiconductor layer; an active layer formed above the first electrode contact layer; and a p-type nitride semiconductor layer formed above the active layer. According to the nitride semiconductor light emitting device, a crystal defect of the active layer is suppressed, so that the reliability of the nitride semiconductor light emitting device is increased and the light output is enhanced.
1. A nitride semiconductor light emitting device comprising:
a buffer layer
an AlInN layer on the buffer layer;
an InGaN layer on the AlInN layer;
an In doped GaN layer on the InGaN layer;
a first semiconductor layer on the In doped GaN layer;
an active layer formed on the first semiconductor layer;
a second semiconductor layer formed on the active layer; and
a third semiconductor layer formed on the second semiconductor layer,
wherein the third semiconductor layer comprises a superlattice structure due to a difference in doping concentration,
wherein the buffer layer comprises a stack structure of AlInN/GaN/AlInN/GaN or Al x In y Ga 1-x-y N/In z Ga 1-z N/GaN.
2. The nitride semiconductor light emitting device according to claim 1 , wherein the AlInN layer is at least two AlInN layers, wherein each layer constituting the AlInN layers is grown at different temperatures.
3. The nitride semiconductor light emitting device according to claim 1 , wherein the AlInN layer is at least two AlInN layers, wherein each layer constituting the AlInN layers is grown such that the content of In linearly decreases.
4. The nitride semiconductor light emitting device according to claim 1 , wherein the AlInN layer is at least two AlInN layers, wherein each layer constituting the AlInN layers is grown such that the content of In linearly decreases and the uppermost layer of the AlInN layers is AlN.
5. The nitride semiconductor light emitting device according to claim 1 , wherein the AlInN layer comprises a first lower AlInN layer and a second upper AlInN layer.
6. The nitride semiconductor light emitting device according to claim 1 , comprising an n-InGaN layer formed on the first semiconductor layer.
7. The nitride semiconductor light emitting device according to claim 1 , comprising a first electrode contact layer on the first semiconductor layer,
wherein the first electrode contact layer is an n-type semiconductor layer.
8. The nitride semiconductor light emitting device according to claim 1 , comprising a first electrode contact layer on the first semiconductor layer,
wherein the first electrode contact layer is a nitride semiconductor layer co-doped with Si and In.
9. The nitride semiconductor light emitting device according to claim 1 , wherein the third semiconductor layer comprises a second electrode contact layer formed on the second semiconductor layer.
10. The nitride semiconductor light emitting device according to claim 9 , wherein the second electrode contact layer is a super overlapped structure of a P-GaN layer having the superlattice structure.
11. The nitride semiconductor light emitting device according to claim 9 , comprising an electrode layer formed on the second electrode contact layer.
12. The nitride semiconductor light emitting device according to claim 11 , wherein the electrode layer is formed of:
a light transmittance oxide comprising ITO(In-SnO), IZO(In-ZnO), ZGO(Ga-ZnO), AZO(Al-ZnO), IGZO(In-GaZnO), AGZO(Al-Ga ZnO), ZnO, IrOx, or RuOx, or
a light transmittance metal of an Au alloy containing Ni metal.
13. A method of fabricating a nitride semiconductor light emitting device, the method comprising:
forming a buffer layer;
forming an AlInN layer on the buffer layer;
forming an InGaN layer on the AlInN layer;
forming an In doped GaN layer on the InGaN layer;
forming a first semiconductor layer on the In doped GaN layer;
forming an active layer on the first semiconductor layer;
forming a second semiconductor layer on the active layer; and
forming a third semiconductor layer on the second semiconductor layer,
wherein the third semiconductor layer comprises a superlattice structure due to a difference in doping concentration,
wherein the buffer layer comprises a stack structure of AlInN/GaN/AlInN/GaN or Al x In y Ga 1-x-y N/In z Ga 1-z N/GaN.
14. The method according to claim 13 , wherein the AlInN layer is at least two AlInN layers, wherein each layer constituting the AlInN layers is grown such that the growth temperature is varied every step.
15. The method according to claim 13 , wherein the AlInN layer is at least two AlInN layers, wherein each layer constituting the AlInN layers is grown such that the content of In linearly decreases.
16. The method according to claim 13 , wherein the AlInN layer is at least two AlInN layers, wherein the AlInN layers are provided in a dual-layered structure of which the upper layer is grown in ramp-up.
17. The method according to claim 13 , wherein the AlInN layer is at least two AlInN layers, wherein the uppermost layer of the AlInN layers is formed of an AlN layer.
18. The method according to claim 13 , wherein forming the third semiconductor layer comprises forming a second electrode contact layer on the second semiconductor layer.
19. The method according to claim 18 , further comprising forming an electrode on the second electrode contact layer, wherein the electrode is formed of:
a light transmittance oxide comprising ITO(In-SnO), IZO(In-ZnO), ZGO(Ga-ZnO), AZO(Al-ZnO), IGZO(In-Ga ZnO), AGZO(Al-Ga ZnO), ZnO, IrOx, or RuOx, or
a light transmittance metal of Au alloy containing Ni metal on the second electrode contact layer.
20. A nitride semiconductor light emitting device comprising:
a buffer layer;
a strain control layer provided in at least two AlInN layers on the buffer layer;
an InGaN layer on the strain control layer;
an In doped GaN layer on the InGaN layer;
a first electrode contact layer formed on the In doped GaN layer;
an active layer formed on the first electrode contact layer;
a p-type nitride semiconductor layer formed on the active layer; and
a second electrode contact layer formed on the p-type nitride semiconductor layer,
wherein the second electrode contact layer comprises a superlattice structure due to a difference in doping concentration,
wherein the buffer layer comprises a stack structure of AlltiN/GaN/AlInN/GaN or Al x In y Ga 1-x-y N/In z Ga 1-z N/GaN.
21. The nitride semiconductor light emitting device according to claim 20 , wherein the second electrode contact layer comprises a super overlapped structure of P-GaN layer having the superlattice structure.
22. The nitride semiconductor light emitting device according to claim 1 , wherein the first semiconductor layer comprises a first electrode contact layer.
23. The nitride semiconductor light emitting device according to claim 1 , wherein the first semiconductor layer comprises at least one of GaN and InGaN.
24. The method according to claim 13 , wherein the first semiconductor layer comprises at least one of GaN and InGaN.
25. The nitride semiconductor light emitting device according to claim 20 , wherein the nitride semiconductor layer comprises at least one of GaN and InGaN.
26. The nitride semiconductor light emitting device according to claim 1 , wherein the third semiconductor layer comprises a Super Overlapped structure of a p-GaN layer,
wherein the Super Overlapped structure of the p-GaN layer comprises a first p-GaN layer having a low doping concentration and a second p-GaN layer having a high doping concentration.
27. The nitride semiconductor light emitting device according to claim 13 , wherein the third semiconductor layer comprises a Super Overlapped structure of a p-GaN layer,
wherein the Super Overlapped structure of the p-GaN layer comprises a first p-GaN layer having a low doping concentration and a second p-GaN layer having a high doping concentration.
28. The nitride semiconductor light emitting device according to claim 20 , wherein the second semiconductor layer comprises a Super Overlapped structure of a p-GaN layer,
wherein the Super Overlapped structure of the p-GaN layer comprises a first p-GaN layer having a low doping concentration and a second p-GaN layer having a high doping concentration.