IP Library Granted Patent US 7,501,657
Granted Patent B2
US 7,501,657 · App. 11/577,700 · Granted Mar 10, 2009

Semiconductor light emitting device, lighting module, illumination apparatus, surface mount LED, and bullet LED

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Quick Facts
Patent No.
US 7,501,657
App. No.
11/577,700
Granted
Mar 10, 2009
Kind
B2
Abstract

Disclosed is a semiconductor light emitting device ( 10 ) that includes an LED chip ( 14 ) mounted on a base substrate ( 12 ) and a phosphor ( 16 ) covering the LED chip ( 14 ). The LED chip ( 14 ) is substantially in the shape of a regular hexagonal prism and the phosphor ( 16 ) is substantially in the shape of a cylinder. The phosphor ( 16 ) is so disposed that the axis of the cylinder substantially coincides with the axis of the prism.

Claims (36)

1. A semiconductor light emitting device comprising:

a light emitting element having a semiconductor multilayer structure that includes a light emission layer and is substantially in a shape of a regular hexagonal prism with a substantially regular hexagonal cross section; and

a phosphor that is substantially in a shape of a cylinder and disposed to cover a main surface and lateral surfaces of the light emitting element, wherein

the light emitting element has such a size that the substantially regular hexagonal cross section measures 2.8 mm or less in a longest diagonal, and

d 2 /d 1 ≦1.4 is satisfied, where

d 1 denotes a corner thickness of the phosphor that is measured from a corner of the substantially regular hexagonal prism along a line connecting the corner and a center of the substantially regular hexagonal cross section, and

d 2 denotes a lateral thickness of the phosphor that is a largest thickness measured from a point on a side of the substantially regular hexagonal prism along a perpendicular bisector of the side.

2. The semiconductor light emitting device according to claim 1 , wherein

the phosphor is disposed so that an axis of the cylinder substantially coincides with an axis of the prism.

3. The semiconductor light emitting device according to claim 2 , wherein

a right section of the prism is substantially in a regular hexagonal shape of which a polygon diameter measures at least 1.4 mm.

4. The semiconductor light emitting device according to claim 3 , wherein

the light emitting element is an LED chip having a light-transmitting single crystal substrate on which the semiconductor multilayer structure is epitaxially grown,

the semiconductor light emitting device further comprises:

a base substrate on which the LED chip is flip-chip mounted and having a first power supply terminal and a second power supply terminal connected to a p-electrode and an n-electrode of the LED chip, respectively, and

the phosphor is partly supported by the base substrate.

5. The semiconductor light emitting device according to claim 1 , wherein

a right section of the prism is substantially in a regular hexagonal shape of which a polygon diameter measures at least 1.4 mm.

6. The semiconductor light emitting device according to claim 5 , wherein

the light emitting element is an LED chip having a light-transmitting single crystal substrate on which the semiconductor multilayer structure is epitaxially grown,

the semiconductor light emitting device further comprises:

a base substrate on which the LED chip is flip-chip mounted and having a first power supply terminal and a second power supply terminal connected to a p-electrode and an n-electrode of the LED chip, respectively, and

the phosphor is partly supported by the base substrate.

7. The semiconductor light emitting device according to claim 1 , wherein

the light emitting element is an LED chip having a light-transmitting single crystal substrate on which the semiconductor multilayer structure is epitaxially grown,

the semiconductor light emitting device further comprises:

a base substrate on which the LED chip is flip-chip mounted and having a first power supply terminal and a second power supply terminal connected to a p-electrode and an n-electrode of the LED chip, respectively, and

the phosphor is partly supported by the base substrate.

8. An illumination module comprising:

a mounting substrate; and

the semiconductor light emitting device of claim 1 mounted on the mounting substrate.

9. An illumination apparatus comprising as a light source the illumination module of claim 8 .

10. A surface mount LED comprising the semiconductor light emitting device of claim 1 , wherein

the light emitting element is an LED chip.

11. A bullet LED comprising the semiconductor light emitting device of claim 1 , wherein

the light emitting element is an LED chip.

Assignments (1)
CHANGE OF NAME Recorded Nov 21, 2008
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 021897/0588 →