Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates
View Patent ↗A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.
1. A method of forming a metal-coated substrate having a CuInGaR 2 film on a surface of the metal coating in such a manner that reaction of the metal with Se is substantially prevented, wherein R is Se or a combination of Se and S and wherein the metal is selected from the group consisting of Mo, W, Cr, Ta, Nb, V and Ti, comprising a step of:
contacting the surface of the metal coating simultaneously with Cu vapor, In vapor, Ga vapor and Se vapor under conditions that substantially avoid contacting the metal surface with Se prior to contacting it with Cu, In and Ga, said metal coating containing oxygen in an amount sufficient to inhibit reaction of the metal with Se;
wherein said contacting with Se vapor is limited to only that amount of Se required to form the CuInGaR 2 film.
2. The method according to claim 1 , wherein the step of contacting the surface of the metal coating simultaneously with the Cu vapor, In vapor, Ga vapor and Se vapor comprises:
a) advancing the metal-coated substrate from within a chamber substantially free of Se vapor through a heated zone having an opening therein defining a CuInGaR 2 deposition zone on the metal-coated substrate, wherein the contacting of the surface of the metal coating occurs on the deposition zone, then advancing the metal-coated substrate out of the heated zone into an enclosed space substantially free of Se vapor; and
b) maintaining a predetermined temperature at an uppermost surface of a liquid comprising molten Se to generate a flow of Se vapor from the uppermost surface, wherein the flow of Se vapor is directionally controlled to the CuInGaR 2 deposition zone so as to contact the surface of the metal-coated substrate while the substrate is in the heated zone.
3. The method according to claim 2 wherein the predetermined temperature is maintained by heating means and cooling means controlled by a thermocouple maintained in contact with the uppermost surface.
4. The method according to claim 2 wherein the substrate is in the form of a web and the heated zone comprises a web guide.
5. The method according to claim 2 wherein the chamber and the enclosed space are the same chamber or space.
6. The method according to claim 2 wherein the substrate is a polymeric film.
7. The method according to claim 1 wherein the substrate is a metal substrate.
8. The method according to claim 1 wherein the substrate is a glass substrate.
9. The method according to claim 1 wherein the metal is Mo.
10. The method according to claim 9 wherein the amount of oxygen is 6-8 atomic percent.
11. The method according to claim 1 wherein the metal is selected from the group consisting of W, Cr, Ta, Nb, V and Ti.
12. The method according to claim 2 wherein the liquid also comprises molten S.