IP Library Granted Patent US 8,263,961
Granted Patent B2
US 8,263,961 · App. 11/578,521 · Granted Sep 11, 2012

Thin film memory device having a variable resistance

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,263,961
App. No.
11/578,521
Granted
Sep 11, 2012
Kind
B2
Abstract

A thin film storage device includes a first electrode ( 3 ), a first variable resistance thin film ( 2 ), and a second electrode ( 1 ). The first electrode ( 3 ) is formed over a surface of a substrate ( 4 ). The first variable resistance thin film ( 2 ) is formed over a surface of the first electrode ( 3 ). The second electrode ( 1 ) is formed over a surface of the first variable resistance thin film ( 2 ). The first variable resistance thin film ( 2 ) comprises a material whose resistance in a bulk state changes in accordance with at least one of a lattice strain and a change of charge-order.

Claims (12)

1. A thin film storage device, comprising:

a first electrode formed over a surface of a substrate;

a variable resistance thin film formed by a material whose resistance changes in accordance with a voltage pulse and having a spinel structure formed over a surface of the first electrode;

a second electrode formed over a surface of the variable resistance thin film; and

an electric circuit configured to apply a voltage pulse to the first and second electrodes,

wherein a resistance in a bulk state of the material which constitutes the variable resistance thin film changes in accordance with a lattice strain generated by a Jahn-Teller effect,

a thickness of the variable resistance thin film is equal to or less than 200 nm, and

said first electrode directly contacts a first surface of said variable resistance thin film, and said second electrode directly contacts a second surface of said variable resistance thin film.

2. The thin film storage device of claim 1 , wherein the material does not contain an alkali metal or an alkaline-earth metal.

3. The thin film storage device of claim 1 , wherein the variable resistance thin film is constituted by a single phase.

4. The thin film storage device of claim 1 , wherein the variable resistance thin film comprises a plurality of resistance phases.

5. The thin film storage device of claim 1 , wherein the variable resistance thin film is a single layer film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: PANASONIC CORPORATION
To: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
Reel/Frame 052755/0917 →