Superconductor Wire Material Having Structure For Inhibiting Crack, Superconductor Power Cable Using The Same And Manufacturing Method Thereof
Disclosed is a superconductor wire material that configures a conductive layer in a banded state. The superconductor wire material includes a substrate made of metal; at least one buffer layer laminated on the substrate; and a superconductive layer laminated on the buffer layer, wherein, when the superconductor wire material is banded, a banding diameter (D) of the superconductor wire material and a thickness (t) of the substrate have the following relation: {t(D+t)}<0.004. Thus, when the superconductor wire material is banded, it is possible to inhibit a crack from being generated between the buffer layer and the superconductive layer of the superconductor wire material.
1 . A superconductor wire material that configures a conductive layer in a banded state, the superconductor wire material comprising:
a substrate made of metal;
at least one buffer layer laminated on the substrate; and
a superconductive layer laminated on the buffer layer,
wherein, when the superconductor wire material is banded, a banding diameter (D) of the superconductor wire material and a thickness (t) of the substrate have the following relation:
t
D
+
t
≺
0.004
2 . The superconductor wire material according to claim 1 , wherein the thickness (t) of the substrate is 30 to 200 mm.
3 . The superconductor wire material according to claim 1 , wherein the substrate is a layer of any one material selected from the group consisting of Ni, Ni-alloy, Cu, Cu-alloy, Ag, Co, Mo, Cd, Pd and Pt.
4 . The superconductor wire material according to claim 1 , wherein the buffer layer is a layer of any one material selected from the group consisting of ZrO 2 , CeO 2 , YSZ, Y 2 O 3 and HfO 2 , or a combination of at least two layers thereof.
5 . The superconductor wire material according to claim 1 , wherein the buffer layer is composed of three layers of CeO 2 , YSZ and CeO 2 .
6 . The superconductor wire material according to claim 1 , wherein the buffer layer is composed of three layers of Y 2 O 3 , YSZ and CeO 2 .
7 . A superconductor power cable having at least one superconductor wire material banded around a former that is a flow path of a coolant, the superconductor wire material comprising:
a substrate made of metal;
at least one buffer layer laminated on the substrate; and
a superconductive layer laminated on the buffer layer,
wherein a banding diameter (D) of the superconductor wire material and a thickness (t) of the substrate have the following relation:
t
D
+
t
≺
0.004
8 . The superconductor power cable according to claim 7 , wherein the thickness (t) of the substrate is 30 to 200 mm.
9 . The superconductor power cable according to claim 7 , wherein the substrate is a layer of any one material selected from the group consisting of Ni, Ni-alloy, Cu, Cu-alloy, Ag, Co, Mo, Cd, Pd and Pt.
10 . The superconductor power cable according to claim 7 , wherein the buffer layer is a layer of any one material selected from the group consisting of ZrO 2 , CeO 2 , YSZ, Y 2 O 3 and HfO 2 , or a combination of at least two layers thereof.
11 . The superconductor power cable according to claim 7 , wherein the buffer layer is composed of three layers of CeO 2 , YSZ and CeO 2 .
12 . The superconductor power cable according to claim 7 , wherein the buffer layer is composed of three layers of Y 2 O 3 , YSZ and CeO 2 .
13 . The superconductor power cable according to claim 7 , wherein a plurality of layers of the superconductor wire material are banded around the former, and insulating layers are interposed between the plurality of layers of the super-conductor wire material.
14 . A method for manufacturing a superconductor power cable, which includes a step of banding at least one layer of a superconductor wire material around a former that is a flow path of a coolant, the superconductor wire material comprising:
a substrate made of metal;
at least one buffer layer laminated on the substrate; and
a superconductive layer laminated on the buffer layer,
wherein, when the superconductor wire material is banded around the former, a banding diameter (D) of the superconductor wire material and a thickness (t) of the substrate have the following relation:
t
D
+
t
≺
0.004
15 . The method for manufacturing a superconductor power cable according to claim 14 , wherein the thickness (t) of the substrate is 30 to 200 mm.
16 . The method for manufacturing a superconductor power cable according to claim 14 , wherein the substrate is a layer of any one material selected from the group consisting of Ni, Ni-alloy, Cu, Cu-alloy, Ag, Co, Mo, Cd, Pd and Pt.
17 . The method for manufacturing a superconductor power cable according to claim 14 , wherein the buffer layer is a layer of any one material selected from the group consisting of ZrO 2 , CeO 2 , YSZ, Y 2 O 3 and HfO 2 , or a combination of at least two layers thereof.
18 . The method for manufacturing a superconductor power cable according to claim 14 , wherein the buffer layer is composed of three layers of CeO 2 , YSZ and CeO 2 .
19 . The method for manufacturing a superconductor power cable according to claim 15 , wherein the buffer layer is composed of three layers of Y 2 O 3 , YSZ and CeO 2 .
20 . The method for manufacturing a superconductor power cable according to claim 14 , wherein, when the superconductor wire material is banded around the former, a plurality of layers of the superconductor wire material are banded with insulating layers being interposed therebetween.