Terbium-doped, silicon-rich oxide electroluminescent devices and method of making the same
View Patent ↗A method of fabricating an electroluminescent device includes, on a prepared substrate, depositing a rare earth-doped silicon-rich layer on gate oxide layer as a light emitting layer; and annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer; and incorporating the electroluminescent device into a CMOS IC. An electroluminescent device fabricated according to the method of the invention includes a substrate, a rare earth-doped silicon-rich layer formed on the gate oxide layer for emitting a light of a pre-determined wavelength; a top electrode formed on the rare earth-doped silicon-rich layer; and associated CMOS IC structures fabricated thereabout.
1. A method of fabricating an electroluminescent device comprising:
preparing a substrate;
forming a gate oxide layer on the substrate;
depositing a rare earth-doped silicon-rich layer, taken from the group of rare earth silicon-rich layers consisting of silicon-rich silicon oxide and silicon-rich silicon nitride, on the gate oxide layer as a light emitting layer;
depositing a control oxide layer on the rare earth-doped silicon-rich layer;
depositing a top electrode on the control oxide layer;
patterning and etching the top electrode, the control oxide layer, the rare earth-doped silicon-rich layer, and the gate oxide layer;
annealing and oxidizing to repair any damage caused to the rare earth-doped silicon-rich layer; and
incorporating the electroluminescent device into a CMOS IC.
2. The method of claim 1 wherein said forming a gate oxide layer includes forming a gate oxide layer from a material taken from the group of materials consisting of SiO 2 , HfO 2 , ZrO 2 , Al 2 O 3 , La 2 O 3 and Si 3 N 4 .
3. The method of claim 1 which further includes forming an additional gate layer directly on the gate oxide layer, the additional gate layer is formed of a material taken from the group of materials consisting of SiO2, HfO2, ZrO2, Al2O3, La2O3 and Si3N4, wherein the material selected for the additional gate layer is different from a material of the gate oxide layer.
4. The method of claim 1 wherein said depositing a control oxide layer includes forming a control oxide layer of a material taken from the group of materials consisting of SiO2, HfO2, ZrO2, Al2O3, La2O3 and Si3N4.
5. The method of claim 1 wherein said depositing a rare earth-doped silicon-rich layer includes depositing a terbium-doped silicon-rich layer.
6. The method of claim 1 wherein light emitted from the rare earth-doped silicon-rich layer has a wavelength of about 550 nm.
7. The method of claim 1 wherein said depositing a rare earth-doped silicon-rich layer includes depositing the rare earth-doped silicon-rich layer by DC sputtering at a power of between about 125 W to 300 W; wherein said annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer includes annealing at a temperature of between about 900° C. to 1000° C. in an oxygen atmosphere for between about four minutes to 160 minutes.
8. The method of claim 1 wherein said depositing a rare earth-doped silicon-rich layer includes depositing by DC-sputtering at a power of about 150 W; oxidizing at a temperature of between about 900° C. to 950° C. in conditions taken from the group of conditions consisting of a time period of about four minutes in a wet oxygen atmosphere and a time period of about 80 minutes to 160 minutes in a wet oxygen atmosphere; followed by said annealing at a temperature of about 900° C. in an atmosphere taken from the group of atmospheres consisting of argon and nitrogen for about three minutes to provide optimum photoluminescent properties.
9. The method of claim 1 wherein said depositing a rare earth-doped silicon-rich layer includes depositing by DC-sputtering at a power of about 300 W to a thickness of about 100 nm; oxidizing at a temperature of about 950° C. for a time period of about four minutes in a wet oxygen atmosphere; followed by said annealing at a temperature of about 900° C. in a nitrogen atmosphere for about three minutes to provide optimum electroluminescent properties.
10. A method of fabricating an electroluminescent device comprising:
preparing a substrate;
forming a gate oxide layer on the substrate;
depositing a rare earth-doped silicon-rich layer, taken from the group of rare earth silicon-rich layers consisting of silicon-rich silicon oxide and silicon-rich silicon nitride, on the gate oxide layer as a light emitting layer;
depositing a control oxide layer on the rare earth-doped silicon-rich layer;
depositing a top electrode on the control oxide layer;
patterning and etching the top electrode, the control oxide layer, the rare earth-doped silicon-rich layer, and the gate oxide layer;
annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer;
incorporating the electroluminescent device into a CMOS IC; and,
wherein said depositing a rare earth-doped silicon-rich layer includes depositing by DC-sputtering at a power of about 150 W; oxidizing at a temperature of between about 900° C. to 950° C. in conditions taken from the group of conditions consisting of a time period of about four minutes in a wet oxygen atmosphere and a time period of about 80 minutes to 160 minutes in a wet oxygen atmosphere; followed by said annealing at a temperature of about 900° C. in an atmosphere taken from the group of atmospheres consisting of argon and nitrogen for about three minutes to provide optimum photoluminescent properties.
11. A method of fabricating an electroluminescent device comprising:
preparing a substrate;
forming a gate oxide layer on the substrate;
depositing a rare earth-doped silicon-rich layer, taken from the group of rare earth silicon-rich layers consisting of silicon-rich silicon oxide and silicon-rich silicon nitride, on the gate oxide layer as a light emitting layer;
depositing a control oxide layer on the rare earth-doped silicon-rich layer;
depositing a top electrode on the control oxide layer;
patterning and etching the top electrode, the control oxide layer, the rare earth-doped silicon-rich layer, and the gate oxide layer;
annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer;
incorporating the electroluminescent device into a CMOS IC; and,
wherein said depositing a rare earth-doped silicon-rich layer includes depositing by DC-sputtering at a power of about 300 W to a thickness of about 100 nm; oxidizing at a temperature of about 950° C. for a time period of about four minutes in a wet oxygen atmosphere; followed by said annealing at a temperature of about 900° C. in a nitrogen atmosphere for about three minutes to provide optimum electroluminescent properties.